Zobrazeno 1 - 10
of 795
pro vyhledávání: '"Bijkerk, F"'
Autor:
Nikolaev, K. V., Soltwisch, V., Hoenicke, P., Scholze, F., de la Rie, J., Yakunin, S. N., Makhotkin, I. A., van de Kruijs, R. W. E., Bijkerk, F.
Following the recent demonstration of grazing-incidence X-ray fluorescence (GIXRF) based characterization of the 3D atomic distribution of different elements and dimensional parameters of periodic nanoscale structures, this work presents a new comput
Externí odkaz:
http://arxiv.org/abs/1908.11452
Autor:
Shafikov, A., van de Kruijs, R.W.E., Benschop, J.P.H., Schurink, B., van den Beld, W.T.E., Houweling, Z.S., Kooi, B.J., Ahmadi, M., de Graaf, S., Bijkerk, F.
Publikováno v:
In Intermetallics May 2022 144
Publikováno v:
J. Appl. Phys. 120, 235304 (2016)
We introduce a model for hydrogen induced blister formation in nanometer thick thin films. The model assumes that molecular hydrogen gets trapped under a circular blister cap causing it to deflect elastically outward until a stable blister is formed.
Externí odkaz:
http://arxiv.org/abs/1609.01092
Autor:
Astakhov, D. I., Goedheer, W. J., Lee, C. J., Ivanov, V. V., Krivtsun, V. M., Koshelev, K. N., Lopaev, D. V., van der Horst, R. M., Beckers, J., Osorio, E. A., Bijkerk, F.
We used numerical modeling to study the evolution of EUV-induced plasmas in argon and hydrogen. The results of simulations were compared to the electron densities measured by microwave cavity resonance spectroscopy. It was found that the measured ele
Externí odkaz:
http://arxiv.org/abs/1603.08130
Publikováno v:
In Applied Surface Science 1 June 2021 550
Autor:
Medvedev, R.V., Hendrikx, C.P., Sturm, J.M., Yakunin, S.N., Makhotkin, I.A., Yakshin, A.E., Bijkerk, F.
Publikováno v:
In Thin Solid Films 1 May 2021 725
Publikováno v:
In Thin Solid Films 30 April 2021 724
Autor:
Shafikov, A., Schurink, B., van de Kruijs, R.W.E., Benschop, J., van den Beld, W.T.E., Houweling, Z.S., Bijkerk, F.
Publikováno v:
In Sensors and Actuators: A. Physical 1 January 2021 317
Autor:
van Zwol, P. J., Vles, D. F., Voorthuijzen, W. P., Péter, M., Vermeulen, H., van der Zande, W. J., van de Kruijs, J. M. Sturm. R. W. E., Bijkerk, F.
Freestanding silicon nitride membranes with thicknesses down to a few tens of nanometers find use as TEM windows or soft X-ray spectral purity filters. As the thickness of a membrane decreases, emissivity vanishes, which limits radiative heat emissio
Externí odkaz:
http://arxiv.org/abs/1511.06111
Autor:
Astakhov, D. I., Goedheer, W. J., Lee, C. J., Ivanov, V. V., Krivtsun, V. M., Yakushev, O., Koshelev, K. N., Lopaev, D. V., Bijkerk, F.
We have used a combination of numerical modeling and experiments to study carbon etching in the presence of a hydrogen plasma. We model the evolution of a low density EUV-induced plasma during and after the EUV pulse to obtain the energy resolved ion
Externí odkaz:
http://arxiv.org/abs/1507.02705