Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Bih-Tiao Lin"'
Autor:
Hou-Yu Chen, Chenming Hu, Chih-Yen Shen, Hsi-Ta Chuang, Fu-Liang Yang, Chiung-Chih Hsu, Shyi-Long Shy, Chun-Chi Chen, Bih-Tiao Lin, Chien-Chao Huang, Fu-Kuo Hsueh, Jan-Tsai Liu, Cheng-San Wu
Publikováno v:
2009 IEEE International Electron Devices Meeting (IEDM).
Record area size of 0.039µm2 for a functional 6T-SRAM cell has been successfully achieved with a novel Nano Injection Lithography (NIL) technique and dynamic Vdd regulator (DVR). The NIL technique is not only maskless for minimizing entry cost but a
Publikováno v:
13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259).
The device features increasingly smaller and complex circuitry in the process 0.15 /spl mu/m technology and beyond 0.15 /spl mu/m. The layers of interconnect are increase. year to year and the number of transistors are increased dramatically. It mean
Autor:
S.-N. Lee, Bih-Tiao Lin
Publikováno v:
10th Annual IEEE/SEMI. Advanced Semiconductor Manufacturing Conference and Workshop. ASMC 99 Proceedings (Cat. No.99CH36295).
We have proposed an end point detector (EPD) on Chemical Mechanical Polishing (CMP) by motor current. The conventional optic EPD can measure the thickness of dielectric film, but it is not easy do "in-situ" measurement. And the signal is not so clear
Publikováno v:
13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science & Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259); 2002, p362-367, 6p
Autor:
Bih-Tiao Lin, Lee, S.-N.
Publikováno v:
10th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference & Workshop ASMC 99 Proceedings (Cat No99CH36295); 1999, p295-298, 4p