Impact of Interfacial Layer on Low-Frequency Noise of HfSiON Dielectric MOSFETs.

Autor: Bigang Mi¹, Devireddy, Siva Prasad¹, Çelik-Butler, Zeynep¹ zbutler@uta.edu, Shanware, Ajit², Colombo, Luigi², Green, Keith², Chambers, J. J.², Visokay, M. R.², Rotondaro, Antonio Luis Pacheco²

Publikováno v: IEEE Transactions on Electron Devices. Jun2006, Vol. 53 Issue 6, p1459-1466. 8p. 4 Color Photographs, 1 Diagram, 2 Charts, 11 Graphs.