Zobrazeno 1 - 10
of 445
pro vyhledávání: '"Bicmos process"'
Akademický článek
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Autor:
Zahra Kolahdouz Esfahani, Massoud Tohidian, Henk van Zeijl, Mohammadreza Kolahdouz, Guoqi Zhang
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 2, Pp 1-13 (2017)
Given the performance decay of high-power light-emitting diode (LED) chips over time and package condition changes, having a reliable output light for sensitive applications is a point of concern. In this study, a light feedback control circuit, incl
Externí odkaz:
https://doaj.org/article/0d8f78afb9514037932bfd7d7af7d304
Publikováno v:
Engineering Science and Technology, an International Journal, Vol 19, Iss 2, Pp 888-893 (2016)
Three different multiple-valued logic (MVL) designs using the multiple-peak negative-differential-resistance (NDR) circuits are investigated. The basic NDR element, which is made of several Si-based metal-oxide-semiconductor field-effect-transistor (
Externí odkaz:
https://doaj.org/article/c662fbaacfa04e48909a8eec02091137
Akademický článek
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Akademický článek
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Publikováno v:
2021 IEEE Photonics Conference (IPC).
This paper discusses components design towards implementing a monolithically integrated 850 nm 64 Gbaud PAM-4 optical receiver with an all-silicon photodetector in SiGe BiCMOS process. The elements discussed are the grating coupler, the all-silicon p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ff84ceb7992f31cdfcc73f881fc53bb
https://doi.org/10.1109/ipc48725.2021.9593054
https://doi.org/10.1109/ipc48725.2021.9593054
Publikováno v:
IEEE Antennas and Wireless Propagation Letters. 18:1046-1050
A double-rhomboid bowtie-slot on-chip antenna aided by a back-to-back E-shaped electromagnetic bandgap (EBG) surface for gain enhancement at W-band is presented. The specific structure of both the antenna and the EBG surface is being reported for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5755bd1748adb401544ba8593f315e2
https://doi.org/10.1109/lawp.2019.2908891
https://doi.org/10.1109/lawp.2019.2908891
Autor:
Howard David J, Robert M. Young, Thomas Beglin, Farooq Amin, Greg Slovin, Doyle T. Nichols, Nicholas Edwards, El-Hinnawy Nabil
Publikováno v:
2021 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents, for the first time, high performance wideband RF switches, single pole double throw (SPDT) and single pole four throw (SP4T), using phase change material (PCM) monolithically integrated into a SiGe BiCMOS process. The insertion l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c70e0cb6bd8abf05bc4b9631f2a7aff7
https://doi.org/10.1109/ims19712.2021.9574962
https://doi.org/10.1109/ims19712.2021.9574962
Publikováno v:
2020 50th European Microwave Conference (EuMC).
This paper introduces a gain enhancement technique for monolithically integrated monopole antennas. The proposed configuration has been designed in a standard 0.13 µm SiGe BiCMOS process. The gain improvement was achieved by combining the on-chip mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1f22e50ab3ab2af45c438f466698b87
https://doi.org/10.23919/eumc48046.2021.9338160
https://doi.org/10.23919/eumc48046.2021.9338160
Publikováno v:
Electronics
Electronics, Penton Publishing Inc., 2021, 10 (12), pp.1397. ⟨10.3390/electronics10121397⟩
Electronics, Vol 10, Iss 1397, p 1397 (2021)
Electronics, Penton Publishing Inc., 2021, 10 (12), pp.1397. ⟨10.3390/electronics10121397⟩
Electronics, Vol 10, Iss 1397, p 1397 (2021)
International audience; From the perspectives of characterized data, calibrated TCAD simulations and compact modeling, we present a deeper investigation of the very high frequency behavior of state-of-the-art sub-THz silicon germanium heterojunction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd1b1c93c8e82812addd745fbe846f83
https://hal.archives-ouvertes.fr/hal-03273304/file/electronics-10-01397-1.pdf
https://hal.archives-ouvertes.fr/hal-03273304/file/electronics-10-01397-1.pdf
