Zobrazeno 1 - 10
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pro vyhledávání: '"Bias temperature instability"'
Akademický článek
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Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 581-586 (2024)
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures. We reveal an abnormal temperature dependence of threshold voltage
Externí odkaz:
https://doaj.org/article/ab1ad5f573de4b1e8a372aaca85675e0
Autor:
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 165-169 (2024)
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit. A circuit was designed to improve ${p}$ -GaN gate stability by using capacitance to releas
Externí odkaz:
https://doaj.org/article/c8b7c641924545828805336a5265d962
Akademický článek
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Autor:
Yu Sun, Walter Schwarzenbach, Sicong Yuan, Zhuo Chen, Yanbin Yang, Bich-Yen Nguyen, Dawei Gao, Rui Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 210-215 (2023)
The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during
Externí odkaz:
https://doaj.org/article/dcd0babd66df4030b90ce2e0dc1d4d1e
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 179-189 (2023)
The integration density of electronic systems is limited by the reliability of the integrated circuits. To guarantee the overall performance, the integrated circuit reliability must be modeled and analyzed at the early design stage. This paper review
Externí odkaz:
https://doaj.org/article/76ff7c673f024195b26807e202ddedf7
Autor:
Tibor Grasser, Siegfried Selberherr
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
Negative bias temperature instability is regarded as one of the most important reliability concerns of highly scaled PMOS transistors. As a consequence of the continuous downscaling of semiconductor devices this issue has become even more important o
Externí odkaz:
https://doaj.org/article/c2cee8f7c33a4ae1a08c4cd9ac0b465c
Publikováno v:
Micromachines, Vol 15, Iss 1, p 127 (2024)
With the technological scaling of metal–oxide–semiconductor field-effect transistors (MOSFETs) and the scarcity of circuit design margins, the characteristics of device reliability have garnered widespread attention. Traditional single-mode relia
Externí odkaz:
https://doaj.org/article/ac7503592862475ea65d98861d18fc6f
Autor:
Zhengguang Tang, Cong Li, Hailong You, Xingming Liu, Yu Wang, Yong Dai, Geng Bai, Xiaoling Lin
Publikováno v:
Micromachines, Vol 15, Iss 1, p 85 (2023)
With the CMOS technology downscaling to the deep nanoscale, the aging effects of devices degrade circuit performance and even lead to functional failure. The stress analysis is critical to evaluate the influence of aging effects on digital circuits.
Externí odkaz:
https://doaj.org/article/fb279d3b27c44b249550e47fcb9b79dd
Akademický článek
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