Zobrazeno 1 - 10
of 48
pro vyhledávání: '"BiCMOS integrated circuit"'
Publikováno v:
J.Low Temp.Phys.
J.Low Temp.Phys., 2022, 209 (3-4), pp.614-621. ⟨10.1007/s10909-022-02833-6⟩
J.Low Temp.Phys., 2022, 209 (3-4), pp.614-621. ⟨10.1007/s10909-022-02833-6⟩
International audience; This paper updates the development of a warm front-end electronics (WFEE) dedicated to cryogenic sensors readout. It belongs to the X-ray integral field unit instrument of ESA's future space observatory: ATHENA. This instrumen
Akademický článek
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Publikováno v:
2018 Asia-Pacific Microwave Conference, APMC 2018, 237-239
STARTPAGE=237;ENDPAGE=239;TITLE=2018 Asia-Pacific Microwave Conference, APMC 2018
STARTPAGE=237;ENDPAGE=239;TITLE=2018 Asia-Pacific Microwave Conference, APMC 2018
This paper presents the design and measurement of a $2\times 56\ \text{Gb}/\text{s}$ PAM-4 dual-channel electro-absorption modulator (EAM) driver in a $0.25-\mu \text{m}$ SiGe:C BiCMOS process for 3D wafer scale packaging. In this paper, a new EAM co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5bc7fdc7d9963bcef6f29b516982fab
https://doi.org/10.23919/APMC.2018.8617323
https://doi.org/10.23919/APMC.2018.8617323
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques, 63(9):7181729, 2942-2952. Institute of Electrical and Electronics Engineers
A high-power and a low-power fully integrated true-time-delay (TTD) phased-array receiver front-end have been developed for Ka-band applications using a 0.25- $\mu{\hbox{m}}$ SiGe:C BiCMOS technology. The high-power front-end, consisting of a high-po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a542382da533fa644c0041a9ed9b66f
https://research.tue.nl/nl/publications/6a827a9b-db76-4bd5-aa75-17cfbe50850c
https://research.tue.nl/nl/publications/6a827a9b-db76-4bd5-aa75-17cfbe50850c
Autor:
Germain, Yves phaede
Ces travaux de recherche visent à introduire et à généraliser l'utilisation des systèmes différentiels dans les applications RF et Micro-ondes. En particulier, dans la conception de dispositifs pour les fonctions d'amplification à faible bruit
Externí odkaz:
http://www.theses.fr/2015LIMO0010/document
Autor:
Michele Tronconi, A. Gola, Ernesto Lasalandra, Fabio Pasolini, Enrico Chiesa, Andrea Baschirotto, T. Ungaretti
Publikováno v:
IEEE Sensors Journal. 3:383-392
A 0.6 /spl mu/m BiCMOS interface for microelectromechanical systems (MEMS) based rotational accelerometers is presented. It is housed in an inexpensive standard SO-24 plastic package with a capacitive rotational accelerometer sensor produced using ME
Publikováno v:
IEEE Journal of Solid-State Circuits. 27:1905-1915
A new BiCMOS fully differential transconductor based on MOS transistors operated in the linear region is presented. The circuit has an equivalent nondominant pole located above 1.5 GHz. This makes it suitable for high-frequency continuous-time filter
Publikováno v:
IEEE Transactions on Consumer Electronics. 37:585-591
An analog integrated front-end circuit for the RDS (Radio-Data-System) digital decoder is described. The core of the circuit is an 8th-order switched-capacitor (SC) bandpass filter at 57 kHz with linear-phase response in a 3 kHz bandwidth. A low-offs
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2005, 540, pp.437-447. ⟨10.1016/j.nima.2004.11.037⟩
BASE-Bielefeld Academic Search Engine
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Elsevier, 2005, 540, pp.437-447. ⟨10.1016/j.nima.2004.11.037⟩
BASE-Bielefeld Academic Search Engine
The paper presents a 16-channel amplifier-discriminator designed in BiCMOS technology. It will be used for the binary parallel readout of gas-filled detectors being designed at the European Synchrotron Radiation Facility. The circuit (named AMS211) h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39fd05d2d52e0087ab799ab6dc6b7fd6
https://hal.archives-ouvertes.fr/hal-00005709
https://hal.archives-ouvertes.fr/hal-00005709
Akademický článek
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