Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bi-cai Pan"'
Publikováno v:
Advanced Physics Research, Vol 2, Iss 8, Pp n/a-n/a (2023)
Abstract Under the continuous irradiation of high‐density and high‐energy photons from the plasma core of a fusion reactor, the plasma‐facing materials (PFMs) of tungsten (W) are in electronically excited states. How hydrogen (H) interacts with
Externí odkaz:
https://doaj.org/article/6e040b7e79fe4ebe8d6ff24f35aae602
Autor:
Li-Ming Zhang, Jing-Chao Xiao, Jun-Ru Wang, Jie-Min Dong, Nai-Qing Ren, Yi-Xuan Li, Bi-Cai Pan, Zhao-Yin Wen, Chun-Hua Chen
Publikováno v:
ACS Applied Materials & Interfaces. 14:11255-11263
Autor:
Junru Wang, Mengmeng Wang, Jingchao Xiao, Jiemin Dong, Yixuan Li, Liming Zhang, Juntao Si, Bi-cai Pan, Chu-sheng Chen, Chun-hua Chen
Publikováno v:
Nano Energy. 94:106972
Publikováno v:
Modern Physics Letters B. :599-604
The binding energy and spectra of clusters related to the growth of synthetic diamond films were calculated by DV-X α method. Having analysed the binding energy and compared the calculated optical spectra with the experimental ones measured by us, w
Publikováno v:
Chinese Physics Letters. 17:215-217
The structural and electronic properties of monovacancy, divacancy defects within crystalline silicon have been investigated systematically using a new tight-binding model with a 216-atom supercell. The formation energies and energy levels of all the
Publikováno v:
Chinese Physics B; May2014, Vol. 23 Issue 5, p1-1, 1p
Publikováno v:
Chinese Physics Letters; May2001, Vol. 18 Issue 5, p1-1, 1p
Autor:
Fang-Xing Zha1, Feng Hong1 fenghong@shu.edu.cn, Bi-Cai Pan2, Yin Wang1, Jun Shao3, Xue-Chu Shen1,3
Publikováno v:
Physical Review B. 1/15/2018, Vol. 97 Issue 3, p1-1. 1p.