Výsledky vyhledávání

Measurements of temperature dependent characteristic of microstrip filter using NBCO film

Autor: Bin Wei, Xu Bo Guo, Li Nan Jiang, Chen Jie Luo, Bi Song Cao, Jia Bin Chen

Publikováno v: 2015 IEEE International Conference on Applied Superconductivity and Electromagnetic Devices (ASEMD).

This paper presents the measured results of microstrip filter with NBCO film. Transmission properties as a function of temperature have been measured in detail for NBCO filters. The newly fabricated eight-pole NBCO filter exhibits a 1-dB bandwidth of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb7cabd099024a192af494864c4b8e1d
https://doi.org/10.1109/asemd.2015.7453677

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Akademický článek

The enhanced performances of a high-temperature superconducting fractal and meander delay line.

Autor: Rui-Xia Wang, Bin Wei, Bi-Song Cao, Xu-Bo Guo, Fei Song, Li-Nan Jiang

Publikováno v: Applied Physics Letters; 6/30/2014, Vol. 104 Issue 26, p1-3, 3p, 1 Diagram, 3 Graphs

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Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon

Autor: Jia-Jiong Xiong, Wei-Zhong Yu, Kang Long, Ai-Lien Jung, Li-Qing Shi, Jian-Zhong Song, David Adler, Bi Song Cao, Gang Liu, Hui-Lin Jiang

Publikováno v: Journal of Non-Crystalline Solids. :221-224

We report measurements of positron annihilation in both pure and hydrogenated amorphous silicon, including lifetime spectra, Doppler-broadening and ACPAR (angular correlation of the positron annihilation radiation). Both the pure (aSi) and the hyd

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::96ae285d821f9737257b52e5bfce1d96
https://doi.org/10.1016/0022-3093(85)90643-x

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Defects and microvoids in a-Si and a-Si:H

Autor: Jia-Jiong Xiong, Wei-Zhong Yu, Yi-Hua Wang, Ai-Lien Jung, Gang Liu, Bi-Song Cao, David Adler

Publikováno v: Journal of Non-Crystalline Solids. 74:19-24

We report the first measurements of positron-annihilation spectra of samples of both pure and hydrogenated amorphous silicon. Comparison of these spectra with that of crystalline silicon indicates that the lowest-lifetime component can be identified

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6618aa751579e8cc1efa88b4f3020ce0
https://doi.org/10.1016/0022-3093(85)90396-5

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