Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bhosle Vikram M"'
Autor:
Darling, Kris A., Guduru, R.K., Reynolds, C. Lewis, Jr, Bhosle, Vikram M., Chan, Ryan N., Scattergood, Ronald O., Koch, Carl C., Narayan, J., Aboelfotoh, M.O.
Publikováno v:
In Intermetallics 2008 16(3):378-383
Publikováno v:
2018 22nd International Conference on Ion Implantation Technology (IIT).
Plasma doping (PLAD) has long been a mainstay in semiconductor manufacturing, specifically memory devices for poly gate and contact doping applications. PLAD is also an attractive technology for fabricating shallow junctions with low implant energies
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98bca0172d9279f3147c33dc8ff0cb34
https://doi.org/10.1109/iit.2018.8807913
https://doi.org/10.1109/iit.2018.8807913
Publikováno v:
Energy Procedia. 38:430-435
Ion implantation is an attractive candidate for PERC solar cells due to the single-sided emitter phosphorus doping. The oxide, which is formed during the implant anneal, can be used as rear passivation of PERC cells. However, the SiO 2 /SiN x rear pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b81891231605b4e26e33ca206512c4b
Publikováno v:
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
In the present paper we highlight the results on passivation of the ion implanted boron emitters using a batch atomic layer deposition (ALD) - AlO x process. We demonstrate that through optimization of the batch ALD process we can achieve extremely l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::724fbacb98fa3b9d30bae47d91c3fa18
https://doi.org/10.1109/pvsc.2014.6924984
https://doi.org/10.1109/pvsc.2014.6924984
Publikováno v:
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC).
We present improvements in c-Si solar cell performance for high sheet resistance (Rsheet) emitters fabricated by ion implantation. We have investigated the effect of sheet resistance (60-115 Ω/sq) on cell efficiency (CE) and also evaluated the effec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4f9ef9b670a1b55d4c2cefeaac603b6
https://doi.org/10.1109/pvsc.2013.6744904
https://doi.org/10.1109/pvsc.2013.6744904
Publikováno v:
2012 38th IEEE Photovoltaic Specialists Conference.
In this paper we present the improvements in cell performance for ion implanted C-Si solar cells by thermal oxidation. We have investigated the effect of oxidation on cell efficiency (CE) and systematically evaluated the effect of oxide thickness on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c13d758e1012c89396d6719336bd4fde
https://doi.org/10.1109/pvsc.2012.6318017
https://doi.org/10.1109/pvsc.2012.6318017
Autor:
Kevin M. Daniels, Basil Tsefrekas, Christopher E. Dube, Wesley Skinner, James Mullin, Bhosle Vikram M, Paul Sullivan
Publikováno v:
AIP Conference Proceedings.
This paper reports the benefits of using patterned ion implantation to create higher efficiency selective emitter solar cells. This doping approach uses in-situ masking to enable selective doping of the contact and field regions of the emitter in a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e664fcf05dfa3f31b68c0871984e6b49
https://doi.org/10.1063/1.4766489
https://doi.org/10.1063/1.4766489
Autor:
Darling, Kris A. kadarlin@unity.ncsu.edu, Guduru, R.K.1, Reynolds, C. Lewis1, Bhosle, Vikram M.1, Chan, Ryan N.1, Scattergood, Ronald O.1, Koch, Carl C.1, Narayan, J.1, Aboelfotoh, M.O.1
Publikováno v:
Intermetallics. Mar2008, Vol. 16 Issue 3, p378-383. 6p.