Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Bhooshan C. Popere"'
Autor:
Bhooshan C. Popere, Shrayesh N. Patel, Rachel A. Segalman, Jun Liu, Christopher M. Evans, Haiyu Fang, Michael L. Chabinyc, Boris Russ, William B. Chang
Publikováno v:
ACS macro letters. 5(4)
Conductive polymers such as PEDOT:PSS hold great promise as flexible thermoelectric devices. The thermoelectric power factor of PEDOT:PSS is small relative to inorganic materials because the Seebeck coefficient is small. Ion conducting materials have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0023d7cd564306450aa8516c129cda8a
https://pubmed.ncbi.nlm.nih.gov/35607236
https://pubmed.ncbi.nlm.nih.gov/35607236
Autor:
Li Cui, James W. Thackeray, Suzanne Coley, Manibarsha Goswami, Bhooshan C. Popere, Emad Aqad, James F. Cameron, Tomas Marangoni, Choong Bong Lee, Ke Yang
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
The development of Chemically Amplified Resists (CARs) for Extreme Ultra-Violet Lithography (EUVL) requires unique molecular and macromolecular design considerations. The combination of photon-induced variation effect coupled with material and proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b5da3cfd949d42ba467fe982f7d533b
https://doi.org/10.1117/12.2583642
https://doi.org/10.1117/12.2583642
Autor:
Yuanyi Zhang, Scott P. O. Danielsen, Bhooshan C. Popere, Andrew T. Heitsch, Mingqi Li, Peter Trefonas, Rachel A. Segalman, Reika Katsumata
Publikováno v:
Macromolecular Materials and Engineering. 307:2200155
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::feb60f8513351170589aec8e441a4222
https://doi.org/10.1002/mame.202200155
https://doi.org/10.1002/mame.202200155
Autor:
Andrew T. Heitsch, Rachel A. Segalman, Bhooshan C. Popere, Ratchana Limary, Mingqi Li, Yuanyi Zhang, Reika Katsumata, Peter Trefonas
Publikováno v:
Chemistry of Materials. 30:5285-5292
Stabilizing ultrathin films, in particular avoiding dewetting, is critical to the application of polymer thin films from biology to electronics. To address this issue, a wide range of approaches ha...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac38a74ba2627ae6f613918a21b31f4b
https://doi.org/10.1021/acs.chemmater.8b02027
https://doi.org/10.1021/acs.chemmater.8b02027
Publikováno v:
Chemistry of Materials. 30:2965-2972
A fundamental understanding of charge transport in polymeric semiconductors requires knowledge of how the electrical conductivity varies with carrier density. The thermopower of semiconducting polymers is also a complex function of carrier density ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7be96d9a070af6ca59036d01154e18f3
https://doi.org/10.1021/acs.chemmater.8b00394
https://doi.org/10.1021/acs.chemmater.8b00394
Autor:
Seamus D. Jones, Nicole S. Schauser, Elayne M. Thomas, Rachel A. Segalman, Joshua M Bartels, Matthew E. Helgeson, Michael L. Chabinyc, Gabriel E. Sanoja, Bhooshan C. Popere
Publikováno v:
Journal of Materials Chemistry C. 6:8762-8769
Polymeric ionic liquids (i.e., PILs) are single ion-conducting materials that exhibit the thermal and electrochemical stability of ionic liquids and the mechanical properties of polymers. Although PILs are exciting for a variety of applications in en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24c64847b4d6e255738050b4e02acc09
https://doi.org/10.1039/c8tc02561d
https://doi.org/10.1039/c8tc02561d
Autor:
Craig A. Pointer, Amanda N. Oldacre, John Strahan, Elizabeth R. Young, Bhooshan C. Popere, Shea M. Martin, Sankaran Thayumanavan, Piyachai Khomein
Publikováno v:
Dalton transactions (Cambridge, England : 2003). 48(23)
Three bodipy-based (BDP = 4,4-difluoro-4-bora-3a,4a-diaza-s-indacene) donor–acceptor dyads were designed and synthesized, and their ground-state and photophysical properties were systematically characterized. The electronic coupling between the BDP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c50ed200d16a6f9fbf0037062d168ab1
https://pubmed.ncbi.nlm.nih.gov/31116199
https://pubmed.ncbi.nlm.nih.gov/31116199
Autor:
Ratchana Limary, Yuanyi Zhang, Peter Trefonas, Bhooshan C. Popere, Mingqi Li, Andrew T. Heitsch, Rachel A. Segalman, Reika Katsumata
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
As devices become ever smaller and more sophisticated, there is also a general need for creating high quality defect-free thin coatings of polymers on 3-dimensional wafer topography, for example, for shrinkage of the size of trench openings. To addre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f169f6d951365e4491c01465b6cc473
https://doi.org/10.1117/12.2514830
https://doi.org/10.1117/12.2514830
Autor:
James F. Cameron, Iou-Sheng Ke, Li Cui, Paul J. LaBeaume, Shintaro Yamada, Lei Zhang, Lawrence Chen, Bhooshan C. Popere, Johnpeter N. Ngunjiri, Kenneth L. Kearns, Greene Daniel, Benjamin Foltz, Keren Zhang, Suzanne Coley, Sabrina Wong, Joshua A. Kaitz
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
The use of multilayer processes in advanced ArF patterning schemes continues to increase as device critical dimensions shrink. In a multilayer stack, underlayer materials play a critical role in terms of gap fill, planarization and etch resistance to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168656f1d653d7afa1fdef2d0c180e6e
https://doi.org/10.1117/12.2514968
https://doi.org/10.1117/12.2514968
Autor:
Ratchana Limary, Andrew T. Heitsch, Rachel A. Segalman, Megan L. Hoarfrost, Peter Trefonas, Yuanyi Zhang, Reika Katsumata, Bhooshan C. Popere, Victor Ho, Ali Javey, Mingqi Li, Kiniharu Takei
Publikováno v:
Advances in Patterning Materials and Processes XXXVI.
Conventional doping of crystalline Si via ion implantation results in a stochastic distribution of doped regions in the x-y plane along with relatively poor control over penetration depth of dopant atoms. As the gate dimensions get to 10 nm, the rela
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37e3200053610fa5b49d9c84199d1e56
https://doi.org/10.1117/12.2514822
https://doi.org/10.1117/12.2514822