Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bhoopendra Kumar Kushwaha"'
Autor:
Chandan Kumar, Rishibrind Kumar Upadhyay, Deepak Kumar Jarwal, Satyabrata Jit, Abhinav Pratap Singh, Amit Kumar, Bhoopendra Kumar Kushwaha
Publikováno v:
IEEE Photonics Technology Letters. 32:337-340
Ultraviolet (UV) detection properties of undoped ZnO and Al-doped ZnO (AZO) based interdigitated metal-semiconductor-metal (MSM) structure are investigated in this paper. High quality of fibrous Al-doped ZnO thin films with enhanced conductivity and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42b767f35ada5f006835f230a8519fa9
https://doi.org/10.1109/lpt.2020.2974780
https://doi.org/10.1109/lpt.2020.2974780
Publikováno v:
Semiconductor Science and Technology. 36:095002
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f02e88c2c554d456b921cfce60f8a41
https://doi.org/10.1088/1361-6641/ac066e
https://doi.org/10.1088/1361-6641/ac066e
Autor:
Bhoopendra Kumar Kushwaha, Saroj Kanta Patra, C. Dhanavantri, Kuldip Singh, Priyavart Parjapat, Ashok Chauhan, Suchandan Pal, Pawan Kumar, Sumitra Singh, Sonachand Adhikari, Sandeep Kumar, Ashok Kumar Lunia
Publikováno v:
Journal of Applied Mathematics and Physics. :1113-1117
GaN/InGaN based violet light emitting diodes (LEDs), emitting at 430 nm, have been grown on conventional single side polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the epitaxial wafers and subsequently fabricated LEDs have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e743ef83ba56dcedb3e4361a5112bd1
https://doi.org/10.4236/jamp.2014.212129
https://doi.org/10.4236/jamp.2014.212129
Autor:
Bhoopendra Kumar Kushwaha, Priyavart Parjapat, Pramila Mahala, Omkar Jani, Abhijit Ray, Suchandan Pal, Sumitra Singh, Pawan Kumar, Kuldip Singh, Ashok Chauhan, C. Dhanavantri
Publikováno v:
Applied Physics A. 122
In this paper, the p-GaN/i-GaN–InGaN (5MQW)/n-GaN solar cell with 33 % indium composition is grown, fabricated and characterized. The X-ray diffraction, atomic force microscopy and photoluminance are performed for the solar cell. The photovoltaic p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::321f60998f40f4258368732a557014e1
https://doi.org/10.1007/s00339-016-0146-0
https://doi.org/10.1007/s00339-016-0146-0
Autor:
A. K. Sharma, P K Prajapati, Kuldip Singh, Ashok Chauhan, Monika Rana, Sonam Joshi, Meenakshi Chouhan, C. Dhanavantri, S. K. Singh, Subodh Johri, Bhoopendra Kumar Kushwaha, Pawan Kumar
Publikováno v:
2013 International Conference on Microwave and Photonics (ICMAP).
In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f1e264d3fccc57841e8abd2b358c8fc
https://doi.org/10.1109/icmap.2013.6733523
https://doi.org/10.1109/icmap.2013.6733523
Autor:
Sonachand Adhikari, Saroj Kanta Patra, Ashok Chauhan, Kuldip Singh, Sandeep Kumar, Suchandan Pal, Pawan Kumar, Sumitra Singh, Ashok Kumar Lunia, Bhoopendra Kumar Kushwaha, C. Dhanavantri, Priyavart Parjapat
Publikováno v:
Scopus-Elsevier
Micro-patterning is carried out on top-surface of GaN/InGaN violet LEDs grown on patterned sapphire substrates (PSS). Electro-luminescence/ light-output of hexagonal hole-type and grating-type LEDs are found 1.8/2.0 and 1.4/1.5 times higher compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ef9ecab02e27cc88c7a5e940f93b662c
http://www.scopus.com/inward/record.url?eid=2-s2.0-84983103354&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-84983103354&partnerID=MN8TOARS
