Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Bhishma Pandit"'
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 551 (2024)
In this study, a self-powered broadband photodetector based on graphene/NiO/n-Si was fabricated by the direct spin-coating of nanostructured NiO on the Si substrate. The current–voltage measurement of the NiO/Si heterostructure exhibited rectifying
Externí odkaz:
https://doaj.org/article/dc8a74c58a74471abf9f4e6f92a7f3e4
Autor:
Bhishma Pandit, Hyeon‐Sik Jang, Yunjo Jeong, Sangmin An, S. Chandramohan, Kyung Kyu Min, Sang Min Won, Chel‐Jong Choi, Jaehee Cho, Seongin Hong, Keun Heo
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 12, Pp n/a-n/a (2023)
Abstract The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN‐based ultraviolet photodetector technology. However, the presence of high dark current deteriorates the photodetector p
Externí odkaz:
https://doaj.org/article/7e01a6635329401b89a9f394406192bf
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
Abstract A dual-functional ultraviolet (UV) photodetector with a large UV-to-visible rejection ratio is presented, in which interdigitated finger-type two-dimensional graphene electrodes are introduced to an AlGaN/GaN heterostructure. Two photocurren
Externí odkaz:
https://doaj.org/article/0e0c4535cf074727811785f75ac066fe
Autor:
Bhishma Pandit, Jaehee Cho
Publikováno v:
AIP Advances, Vol 11, Iss 11, Pp 115322-115322-7 (2021)
Solar-blind deep-ultraviolet (UV) photodetectors (PDs) with high responsivity and fast response have attracted significant attention in environmental, industrial, biological, and military applications. AlGaN is a representative semiconductor material
Externí odkaz:
https://doaj.org/article/d0a2d685005446e485648fc47ea05422
Publikováno v:
AIP Advances, Vol 11, Iss 4, Pp 045314-045314-6 (2021)
A graphene Schottky contact was fabricated on an AlGaN/GaN heterostructure and subsequently analyzed. The calculated and experimentally measured Schottky barrier heights (SBHs) determined using the theoretical Schottky–Mott model, the thermionic em
Externí odkaz:
https://doaj.org/article/054904e83ce74472b93594e2223bd635
Autor:
Bhishma Pandit, Jaehee Cho
Publikováno v:
Applied Sciences, Vol 8, Iss 11, p 2098 (2018)
AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal⁻semiconductor⁻metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxi
Externí odkaz:
https://doaj.org/article/3422466807c24af5b7004221c59c5378
Publikováno v:
AIP Advances, Vol 6, Iss 6, Pp 065007-065007-5 (2016)
The current transport mechanism of graphene formed on AlxGa1−xN/GaN heterostructures with various Al mole fractions (x = 0.15, 0.20, 0.30, and 0.40) is investigated. The current–voltage measurement from graphene to AlGaN/GaN shows an excellent re
Externí odkaz:
https://doaj.org/article/9ca55d8e56444ada81a8a65d6e92b7e3
Publikováno v:
Advanced Functional Materials. 33
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-7 (2020)
Scientific Reports
Scientific Reports
A dual-functional ultraviolet (UV) photodetector with a large UV-to-visible rejection ratio is presented, in which interdigitated finger-type two-dimensional graphene electrodes are introduced to an AlGaN/GaN heterostructure. Two photocurrent generat
Autor:
Bhishma Pandit, Jaehee Cho
Publikováno v:
Thin Solid Films. 660:824-827
We report on the characteristics of reduced graphene oxide (rGO)/GaN Schottky diodes in which the reduction process is performed at various temperatures. The Schottky barrier height of the rGO/GaN Schottky diode peaks at 1.07 eV with the reduction te