Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Bheema Rao Nistala"'
Publikováno v:
ECS Journal of Solid State Science and Technology.
Gate-all around (GAA) device is one of the cutting-edge technologies and the advantages of these devices can be improved by incorporating the dual material (DM) and graded channel (GC) techniques. This manuscript investigates for the first time, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b95a3087b89eb603542d80270d86dcce
https://doi.org/10.1149/2162-8777/acda63
https://doi.org/10.1149/2162-8777/acda63
Publikováno v:
Journal of Computational Electronics. 21:243-252
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fe78b8e0d4fee96cbc8b16887207fb
https://doi.org/10.1007/s10825-021-01847-9
https://doi.org/10.1007/s10825-021-01847-9
Publikováno v:
2023 36th International Conference on VLSI Design and 2023 22nd International Conference on Embedded Systems (VLSID).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86feae60b09b9d8dee8cca1a9f4cdfc2
https://doi.org/10.1109/vlsid57277.2023.00065
https://doi.org/10.1109/vlsid57277.2023.00065
Publikováno v:
Journal of Computational Electronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e1a5f896c042a5b1ac86dbc8e9afd0
https://doi.org/10.1007/s10825-022-01992-9
https://doi.org/10.1007/s10825-022-01992-9
Publikováno v:
2022 IEEE International Symposium on Smart Electronic Systems (iSES).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be67815f31888cf59b2ecbcb10ea1c2d
https://doi.org/10.1109/ises54909.2022.00068
https://doi.org/10.1109/ises54909.2022.00068
Autor:
Bheema Rao Nistala, Sunil Kumar Tumma
Publikováno v:
Circuit World. 48:333-340
Purpose The purpose of this study is to develop a high-quality factor fractal inductor for wireless applications such as satellite, WLAN, Bluetooth, microwave, radar and cellular phone. Design/methodology/approach The Hilbert fractal curve is used in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f9c8758823f100fee2e29f5926b710
https://doi.org/10.1108/cw-09-2020-0264
https://doi.org/10.1108/cw-09-2020-0264
Publikováno v:
Silicon. 14:2741-2756
The performances of analog/RF parameters of a graded channel gate stack triple material double gate (GCGS-TMDG) strained-Silicon (s-Si) MOSFET with fixed charges are analyzed by using Sentaurus TCAD simulator. For the GCGS-TMDG s-Si MOSFET, analog/RF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57c5213c2d36c6f9033a92f23a80b285
https://doi.org/10.1007/s12633-021-01028-0
https://doi.org/10.1007/s12633-021-01028-0
Publikováno v:
Journal of Computational Electronics. 20:492-502
The analog/radiofrequency (RF) performance of a strained-silicon (s-Si) graded-channel dual-material double gate (GC-DMDG) metal–oxide–semiconductor field-effect transistor (MOSFET) with interface charges is investigated by using Sentaurus techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80f354c6b25782ed16e5ce5cc4a6aba
https://doi.org/10.1007/s10825-020-01578-3
https://doi.org/10.1007/s10825-020-01578-3
Autor:
Bheema Rao Nistala, Shashank Rebelli
Publikováno v:
IEEE Transactions on Electromagnetic Compatibility. 62:521-531
In this paper, the multiresolution time domain (MRTD) method with its unique features is tailored for modeling interconnects. To build further credence to this and its profound existence in the recent state-of-the-art, simulations for inclusive cross
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ff6ad45811b0d187d73b9aaec2ff22
https://doi.org/10.1109/temc.2019.2903728
https://doi.org/10.1109/temc.2019.2903728
Publikováno v:
Circuit World. 46:215-219
Purpose This paper aims to present an efficient method to improve quality factor of printed fractal inductors based on electromagnetic band-gap (EBG) surface. Design/methodology/approach Hilbert fractal inductor is designed and simulated using high-f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfda587178c97a379b44d3c4d874ab01
https://doi.org/10.1108/cw-06-2019-0052
https://doi.org/10.1108/cw-06-2019-0052