Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Bhavya Kumar"'
Publikováno v:
Materials Today: Proceedings. 71:155-159
Autor:
Bhavya Kumar, Rishu Chaujar
Publikováno v:
2022 IEEE International RF and Microwave Conference (RFM).
Publikováno v:
2022 8th International Conference on Signal Processing and Communication (ICSC).
Publikováno v:
2022 IEEE Silchar Subsection Conference (SILCON).
Publikováno v:
Micro and Nanostructures. 180:207593
Autor:
Bhavya Kumar, Rishu Chaujar
Publikováno v:
Silicon. 14:309-321
This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded static, analog, and distortion performance. The crucial static and anal
Publikováno v:
2022 IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT).
Publikováno v:
Microelectronics Journal. 135:105766
Autor:
Rishu Chaujar, Bhavya Kumar
Publikováno v:
Silicon. 13:3741-3753
In this article, we investigated the impact of temperature variation on DC, analog, RF, and wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas 3D simulator. The GAA structure introduction enhances the switching rat
Autor:
Bhavya Kumar, Rishu Chaujar
Publikováno v:
Silicon. 13:919-927
This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have been compared with conventional FinFET and GAA FinFET. It has been observed