Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Bhaumik V. Mistry"'
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
In the present work, semiconducting 6% Nb doped TiO2 (NTO) have been deposited on quartz and silicon substrates by pulse laser deposition (PLD) technique with NTO target in high vacuum. Structural, surface, electrical, and optical properties of NTO t
Autor:
Utpal S. Joshi, Bhaumik V. Mistry
Publikováno v:
Journal of Materials Science: Materials in Electronics. 29:13687-13691
Transparent resistive switching characteristics of amorphous ZrO2 (a-ZrO2) based memory film with amorphous In and Ga co-doped ZnO (a-IGZO) conducting electrode were investigated. a-ZrO2/a-IGZO heterojunction was fabricating using pulse laser deposit
Autor:
Bhaumik V. Mistry, Utpal S. Joshi
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2018.
The resistance switching (RS) properties of the oxide based heterostructure investigated. Conducting oxide electrodes LaNiO3 (LNO) and In and Ga co-doped ZnO (IGZO) were grown by pulse laser deposition (PLD) technique on quartz (SiO2) substrate. On t
Autor:
Utpal S. Joshi, Bhaumik V. Mistry
Publikováno v:
AIP Conference Proceedings.
c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the c
Autor:
Utpal S. Joshi, Bhaumik V. Mistry
Publikováno v:
AIP Conference Proceedings.
In this study Ga doped ZnO (GZO) transparent conducting thin films were grown on glass substrate using sol gel spin coating method. The Ga content in GZO was varied by calculated amount of Ga doping source added in solvent. The structural, optoelectr
Publikováno v:
AIP Conference Proceedings.
Cuprous oxide (Cu2O) is a promising non-toxic and low cost semiconductor with potential applications in photovoltaic devices and sensor applications. Copper oxide thin films were prepared on glass substrate by pulse laser deposition. The effects of a
Publikováno v:
Solid State Phenomena. 209:18-22
Swift heavy ion (SHI) irradiation of materials induces variety of functionalities and tenability in advance materials. Recent observations of electrical switching in perovskite oxides have triggered a lot of interest for its potential use as non vola
Publikováno v:
Solid State Phenomena. 209:94-97
Resistance switching properties of nanostructured In2Subscript textO3 films grown on Pt and LaNiO3 (LNO) bottom electrodes have been investigated. High quality In2O3/LNO/SiO2 and In2O3/Pt/Ti/SiO2/Si heterostructures were grown by pulsed laser deposit
Publikováno v:
Radiation Effects and Defects in Solids. 168:625-629
Resistance switching (RS) properties of nanostructured In2O3 films grown on Pt bottom electrode have been investigated for non-volatile memory applications. Ag/In2O3/Pt/Si layers were fabricated by...
Publikováno v:
Applied Physics A. 122
Electrical and optical properties of pristine and swift heavy ion (SHI) irradiated p–n junction diode have been investigated for advanced electronics application. Fe:SnO2/Li:NiO p–n junction was fabricated by using pulsed laser deposition on c-sa