Intensity and Phase Modulators at 1.55 mu m in GaAs/AlGaAs Layers Directly Grown on Silicon

Autor: Bhasker, Prashanth, Norman, Justin, Bowers, John, Dagli, Nadir

Publikováno v: Bhasker, P; Norman, J; Bowers, J; & Dagli, N. (2018). Intensity and Phase Modulators at 1.55 mu m in GaAs/AlGaAs Layers Directly Grown on Silicon. JOURNAL OF LIGHTWAVE TECHNOLOGY, 36(18), 4205-4210. doi: 10.1109/JLT.2018.2863208. UC Santa Barbara: Retrieved from: http://www.escholarship.org/uc/item/4md5k5h4
JOURNAL OF LIGHTWAVE TECHNOLOGY, vol 36, iss 18

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5d98575d707079a585f94e78c20c7161
http://www.escholarship.org/uc/item/4md5k5h4

Very low voltage InGaAlAs/InAlAs MQW core electro-optic modulators fabricated with conventional processing.

Autor: Kim, Nak Ki, Bhasker, Prashanth, Dogru, Selim, Dagli, Nadir

Publikováno v: 2015 IEEE Photonics Conference (IPC); 2015, p92-93, 2p