Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Bhaskar Nagabhirava"'
Autor:
Bhaskar Nagabhirava, Nelson Felix, Siva Kanakasabapathy, Rich Wise, Luciana Meli, Dominik Metzler, Phil Friddle, Jennifer Church, Anuja De Silva
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XI.
Extending extreme ultraviolet (EUV) single exposure patterning to its limits is dependent on eliminating its stochastic defectivity. Along with developments in photoresist platforms, the patterning film stack also needs to be considered. The material
Autor:
Rich Wise, Bhaskar Nagabhirava, Jennifer Church, Nader Shamma, Luciana Meli, Dominik Metzler, Phil Friddle, Anuja De Silva
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2019.
Extending extreme ultraviolet (EUV) single exposure patterning to its limits is dependent on eliminating its stochastic defectivity. Along with developments in photoresist platforms, the patterning film stack also needs to be considered. The material
Autor:
Catherine B. Labelle, Bhaskar Nagabhirava, Andre Labonte, Xun Xiang, Stefan Schmitz, Genevieve Beique, Michael Goss, Phil Friddle, Lei Sun, Dominik Metzler, John C. Arnold
Publikováno v:
Advanced Etch Technology for Nanopatterning VII.
The thin nature of EUV (Extreme Ultraviolet) resist has posed significant challenges for etch processes. In particular, EUV patterning combined with conventional etch approaches suffers from loss of pattern fidelity in the form of line breaks. A typi
Publikováno v:
IEEE Transactions on Nanotechnology. 10:710-714
In this paper, we investigate key reliability limiting factors of bilayer graphene (BLG)/copper hybrid interconnect system by examining its current-induced breakdown behavior and BLG/Cu contact. The results show that BLG displays an impressive curren
Publikováno v:
ECS Transactions. 28:39-44
Scaling, power, and reliability issues in traditional copper-based interconnect have driven research towards alternative materials for next-generation interconnects technology for integrated systems. Recently, graphene has emerged as a highly competi
Autor:
Mignot Yann, Phil Friddle, Catherine B. Labelle, Stafan Schmitz, Genevieve Beique, Bhaskar Nagabhirava, John C. Arnold, Changwoo Lee, Peng Wang, Andre Labonte, Michael Goss, Richard D. Yang, John Mucci, Jian Wu, Bassem Hamieh, Nouradine Rassoul
Publikováno v:
SPIE Proceedings.
As feature critical dimension (CD) shrinks towards and beyond the 7nm node, patterning techniques for optical lithography with double and triple exposure will be replaced by EUV patterning. EUV enables process and overlay improvement, as well as a po
Publikováno v:
IEEE Electron Device Letters. 31:1155-1157
We investigate the key reliability limiting factors of bilayer graphene (BLG) under current stressing by examining the breakdown characteristics of BLG with chemical-mechanical planarization copper contacts. It is observed that dc current-induced the
Publikováno v:
2010 IEEE International Reliability Physics Symposium.
Graphene is considered to be promising candidate for future transistor and interconnects material in integrated circuits because of its high intrinsic mobility and current-carrying capacity outperforming Cu. Particularly, bilayer graphene (BLG) syste
Autor:
Yang Xu, Bhaskar Nagabhirava, Haiyuan Gao, Robert E. Geer, Benjamin D. Briggs, Bin Yu, Gayathri Rao
Publikováno v:
Applied Physics Letters. 97:223102
We report on the electromechanical robustness of graphene in an extreme condition of deformation: uniaxial bending. A large-angle-bent graphenemonolayer was obtained with a predefined template. Structural/mechanical analysis is conducted, followed by