Zobrazeno 1 - 10
of 284
pro vyhledávání: '"Bharat L. Bhuva"'
Autor:
Patrick K. Darmawi-Iskandar, Andrew M. Aaron, En Xia Zhang, Bharat L. Bhuva, Jeffery S. Kauppila, Jim L. Davidson, Michael L. Alles, Daniel M. Fleetwood, Lloyd W. Massengill
Publikováno v:
IEEE Transactions on Nuclear Science. 70:449-455
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d0f491816e086c9e6bc20a31181afd8
https://doi.org/10.1109/tns.2023.3242644
https://doi.org/10.1109/tns.2023.3242644
Autor:
Zongru Li, Christopher Elash, Chen Jin, Li Chen, Shi-Jie Wen, Rita Fung, Jiesi Xing, Shuting Shi, Zhi Wu Yang, Bharat L. Bhuva
Publikováno v:
IEEE Transactions on Nuclear Science. 70:596-602
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2478c885b3bda684a94f3e4db0fcffe
https://doi.org/10.1109/tns.2023.3257744
https://doi.org/10.1109/tns.2023.3257744
Autor:
Yoni Xiong, Nicholas J. Pieper, Alexandra T. Feeley, Balaji Narasimham, Dennis R. Ball, Bharat L. Bhuva
Publikováno v:
IEEE Transactions on Nuclear Science. 70:381-386
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31aa30adc0859d05f7903efce4b97918
https://doi.org/10.1109/tns.2022.3226210
https://doi.org/10.1109/tns.2022.3226210
Autor:
Nicholas J. Pieper, Yoni Xiong, Alexandra Feeley, John Pasternak, Nathaniel Dodds, D. R. Ball, Bharat L. Bhuva
Publikováno v:
IEEE Transactions on Nuclear Science. 70:401-409
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44f1b167995791cfc46b11139d79af7b
https://doi.org/10.1109/tns.2023.3240318
https://doi.org/10.1109/tns.2023.3240318
Publikováno v:
2023 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6da337889fcd3f24911b3d5580492079
https://doi.org/10.1109/irps48203.2023.10117896
https://doi.org/10.1109/irps48203.2023.10117896
Publikováno v:
IEEE Transactions on Nuclear Science. 69:422-428
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30161f934965e815e2dbdc13017711b9
https://doi.org/10.1109/tns.2021.3138501
https://doi.org/10.1109/tns.2021.3138501
Autor:
En Xia Zhang, Alexandra T. Feeley, Yoni Xiong, Peng Fei Wang, Lloyd W. Massengill, Bharat L. Bhuva, Xun Li
Publikováno v:
IEEE Transactions on Nuclear Science. 68:1579-1584
Total ionizing dose (TID) effects at the 7-nm bulk FinFET node are characterized through changes in ring oscillator (RO) frequencies and current as a function of $V_{\mathrm {DD}}$ to model delay and power degradations in digital circuits. At the 7-n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e10f3f8e13f71cc2cf8a21af40746be
https://doi.org/10.1109/tns.2021.3085341
https://doi.org/10.1109/tns.2021.3085341
Autor:
R. Fung, Lloyd W. Massengill, C. B. Sheets, Jeffrey S. Kauppila, Jingchen Cao, Dennis R. Ball, S.-J. Wen, Carlo Cazzaniga, L. Xu, Bharat L. Bhuva
Publikováno v:
IEEE Transactions on Nuclear Science. 68:830-834
Terrestrial neutron and alpha particle irradiation data for a 7-nm bulk FinFET technology reveal the persisting reliability threat single-event latchup (SEL) poses to advanced technology nodes. SEL is characterized over a wide range of supply voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7b6529aae4a8d6b79e629b7de39390a
https://doi.org/10.1109/tns.2021.3049736
https://doi.org/10.1109/tns.2021.3049736
Autor:
Jeffrey S. Kauppila, Bharat L. Bhuva, Jingchen Cao, Joseph V. D'Amico, Dennis R. Ball, Mike Rathore, Shi-Jie Wen, Balaji Narasimham, L. Xu, Lloyd W. Massengill, R. Fung
Publikováno v:
IEEE Transactions on Nuclear Science. 68:823-829
In this work, single-event upset (SEU) responses of D flip-flop (FF) designs with different threshold-voltage options in a 7-nm bulk FinFET technology are examined. Experimental data imply that single-event (SE) cross section depends heavily on suppl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::113cdc233583734f49adfa2babea4ebc
https://doi.org/10.1109/tns.2021.3050719
https://doi.org/10.1109/tns.2021.3050719
Publikováno v:
IEEE Transactions on Nuclear Science. 67:1114-1117
Engineers often stack printed circuit boards (PCBs), populated with semiconductor devices, one behind the other in neutron beams to improve the error statistics in radiation-effects tests. As the neutron beam traverses through the boards, the neutron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::addac41313d70e5808093110c000048f
https://doi.org/10.1109/tns.2020.2977275
https://doi.org/10.1109/tns.2020.2977275