Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Bharat Krishnan"'
Publikováno v:
International Journal For Multidisciplinary Research. 5
The usual treatment modalities for an immature permanent tooth that has undergone pulpal necrosis is Apexification using Calcium Hydroxide or MTA. But both these approaches doesnot cause dentinal wall thickening, lengthening and apex maturation and c
Autor:
Ashwini Chandrashekar, Jinping Liu, Bharat Krishnan, M. Gribelyuk, A. Zainuddin, Kassim Joseph K, T. J. Tang, Zhiguo Sun, J. Yang, Eswar Ramanathan, Shishir Ray, Ritesh Ray Chaudhuri, Tian Shen, Jay Mody, Huang Liu, Anbu Selvam Km Mahalingam, Kong Boon Yeap, Linjun Cao, Rinus T. P. Lee, Ryan Sporer, D. Damjanovic, N. Petrov
Publikováno v:
2018 IEEE Symposium on VLSI Technology.
Nanosecond laser-induced grain growth in Cu interconnects is demonstrated for the first time using 14nm FinFET technology. We achieved a 35% reduction in Cu interconnect resistance, which delivers a 15% improvement in RC and a gain of 2 – 5% in I D
Autor:
Dhruv Singh, A. Gassaria, V. Chauhan, A. da Silva, P. Lindo, Daniel J. Dechene, M. Gribelyuk, I. Ahsan, M. Hasan, Judson R. Holt, Rod Augur, Jaeger Daniel, G. Northrop, G. Gomba, Ghosh Somnath, H. Narisetty, Basanth Jagannathan, Ting-Hsiang Hung, P. Liu, Y. Zhong, T. Gordon, Y. Fan, C. Schiller, A. Blauberg, O. Patterson, B. Morganfeld, Andres Bryant, J. Choo, T. Nigam, B. Senapati, V. Sardesai, N. Baliga, C. An, I. Ramirez, Rishikesh Krishnan, Arkadiusz Malinowski, S. Lucarini, Z. Sun, Sadanand V. Deshpande, R. Bhelkar, Mahender Kumar, Kong Boon Yeap, D. Conklin, Q. Fang, R. Gauthier, Purushothaman Srinivasan, S. Crown, M. Ozbek, Linjun Cao, G. Han, Z. Song, L. Huang, C. Serrau, R. Sweeney, M. Tan, Keith Donegan, Souvick Mitra, A. Zainuddin, P. Agnello, Balasubramanian S. Haran, Haifeng Sheng, B. Greene, A. Hassan, Tabakman Keith, Xin Wang, Sanjay Parihar, L. Cheng, M. Lagus, Jessica Dechene, D. Xu, G. Gifford, M. Zhao, Jeyaraj Antony Johnson, Y. Yan, Rick Carter, Manoj Joshi, W. Kim, Gabriela Dilliway, Jack M. Higman, S. Kalaga, Kai Zhao, Jinping Liu, A. Ogino, M. Lipinski, Amanda L. Tessier, Garo Jacques Derderian, S. Madisetti, N. Shah, Christopher Ordonio, M. Aminpur, Rakesh Ranjan, S. Saudari, Christa Montgomery, Tony Tae-Hyoung Kim, Jeric Sarad, Jae Gon Lee, Bharat Krishnan, Joseph F. Shepard, L. Hu, J. Sporre, Akil K. Sutton, Eswar Ramanathan, Cathryn Christiansen, J.H. Han, J. Lemon, Patrick Justison, Natalia Borjemscaia, Scott C. Johnson, B. Cohen, Kan Zhang, Srikanth Samavedam, G. Xu, T. Xuan, Unoh Kwon, C. Meng, Katsunori Onishi, Y. Shi, C. Huang, R. Coleman, Manfred Eller, Shreesh Narasimha, B. Kannan, J. Yang, Vivek Joshi, W. Ma, Christopher D. Sheraw, A. K. M. Mahalingam, Craig Child, E. Woodard, Tao Chu, Y. Jin, D. K. Sohn, Hasan M. Nayfeh, Mary Claire Silvestre, M. Lingalugari, G. Biery, Tian Shen, Carl J. Radens, E. Kaste, C-H. Lin, K. Han, K. Anil, Ankur Arya, Mehta Jaladhi, Jia Zeng, S.L. Liew, Michael V. Aquilino, M. Yu, M. Chen, Rohit Pal, E. Maciejewski, Stephan Grunow, Robert Fox, Rinus T. P. Lee
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We present a fully integrated 7nm CMOS platform featuring a 3rd generation finFET architecture, SAQP for fin formation, and SADP for BEOL metallization. This technology reflects an improvement of 2.8X routed logic density and >40% performance over th
Autor:
Yaroslav Koshka, Bharat Krishnan, Albert V. Davydov, J. Neil Merrett, Rooban Venkatesh K.G. Thirumalai
Publikováno v:
Journal of Materials Research. 28:50-56
A method of growing SiC nanowires (NWs) on 4H–SiC surfaces by in situ vapor-phase catalyst delivery was developed as an alternative to the ex situ deposition of the metal catalyst on the targeted surfaces before the NW chemical vapor deposition (CV
Autor:
Olle Kordina, Siva Prasad Kotamraju, Yaroslav Koshka, Bharat Krishnan, Erik Janzén, Anne Henry, Franziska Christine Beyer
Publikováno v:
Materials Science Forum. :129-132
A reduced growth pressure (down to 10 Torr) was employed for the low-temperature chloro-carbon epitaxial growth. More than two times lower H2 flow rate became possible. The optimal input H2/Si and C/Si ratios were also lower. A significant reduction
Autor:
Yaroslav Koshka, Rooban Venkatesh K.G. Thirumalai, Joseph Neil Merrett, Bharat Krishnan, Siva Prasad Kotamraju
Publikováno v:
Materials Science Forum. :133-136
Vanadium doping from SiCl4 source during epitaxial growth with chlorinated C and Si precursors was investigated as a mean of achieving compensated and semi-insulating epitaxial 4H-SiC layers for device applications. Thin epilayers were grown at 1450
Autor:
Rooban Venkatesh K.G. Thirumalai, Bharat Krishnan, Yaroslav Koshka, Joseph Neil Merrett, Siddarth Sundaresan, Albert V. Davydov, Igor Levin
Publikováno v:
Materials Science Forum. :1279-1282
Growth of SiC nanowires (NWs) on monocrystalline 4H-SiC substrates was conducted to investigate a possibility of NW alignment and polytype control. The growth directions of the NWs on the top surfaces and the vertical sidewalls of 4H-SiC mesas having
Autor:
Albert V. Davydov, Bharat Krishnan, J. Neil Merrett, Rooban Venkatesh K.G. Thirumalai, Yaroslav Koshka
Publikováno v:
Crystal Growth & Design. 12:2221-2225
Several different growth directions of SiC nanowires (NWs) determined by the substrate surface crystallographic orientation were achieved by conducting vapor−liquid−solid growth on the top surfaces and the sidewalls of the 4H-SiC mesas. When subs
Publikováno v:
Journal of Crystal Growth. 321:8-14
Semi-insulating 4H-SiC epitaxial layers were produced by chloro-carbon epitaxial growth at an intermediate growth temperature of 1450 °C and at high growth temperatures of 1600 °C, enabling growth rates of 6 and in excess of 60 μm/h, respectively.
Autor:
Siddarth Sundaresan, Yaroslav Koshka, Albert V. Davydov, Igor Levin, Bharat Krishnan, J. Neil Merrett, Rooban Venkatesh K.G. Thirumalai
Publikováno v:
Crystal Growth & Design. 11:538-541
SiC nanowires were grown on monocrystalline 4H-SiC wafers by chemical vapor deposition using the vapor-liquid-solidgrowthmode.Thegrowthdirectionofthenanowireswasdictatedbythecrystallographicorientationofthe 4H-SiC substrates. Two distinct types of na