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pro vyhledávání: '"Bhanja, Sanjukta"'
Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of parallel or
Externí odkaz:
http://arxiv.org/abs/2205.12494
Extreme scaling for purposes of achieving higher density and lower energy continues to increase the probability of memory faults. For domain wall (DW) memories, misalignment faults arise when aligning domains with access points. A previously understu
Externí odkaz:
http://arxiv.org/abs/2203.08303
Publikováno v:
IEEE Transactions on Nanotechnology
Domain-Wall Memory (DWM) structures typically bundle nanowires shifted together for parallel access. Ironically, this organization does not allow the natural shifting of DWM to realize \textit{logical shifting} within data elements. We describe a nov
Externí odkaz:
http://arxiv.org/abs/2112.12692
Autor:
Ollivier, Sebastien, Longofono, Stephen, Dutta, Prayash, Hu, Jingtong, Bhanja, Sanjukta, Jones, Alex K.
The growth in data needs of modern applications has created significant challenges for modern systems leading a "memory wall." Spintronic Domain Wall Memory (DWM), related to Spin-Transfer Torque Memory (STT-MRAM), provides near-SRAM read/write perfo
Externí odkaz:
http://arxiv.org/abs/2108.01202
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We present a novel hybrid CMOS-MQCA architecture using multi-layer Spintronic devices as computing elements. A feasibility study is presented with 22nm CMOS where new approaches for spin transfer torque induced clocking and read-out scheme for variab
Externí odkaz:
http://arxiv.org/abs/1102.4034
As devices continue to scale, imperfections in the fabrication process will have a more substantial impact on the reliability of a system. In Magnetic Cellular Automata (MCA) data is transferred through the coupling of neighboring cells via magnetic
Externí odkaz:
http://arxiv.org/abs/1011.0396
Publikováno v:
Microelectronics Reliability, 2010
The application of current generation computing machines in safety-centric applications like implantable biomedical chips and automobile safety has immensely increased the need for reviewing the worst-case error behavior of computing devices for faul
Externí odkaz:
http://arxiv.org/abs/0906.3282
Publikováno v:
Journal of Applied Physics; 8/28/2022, Vol. 132 Issue 8, p1-11, 11p
Akademický článek
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