Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Bhakti Jariwala"'
Autor:
Alan Seabaugh, Paolo Paletti, Bhakti Jariwala, M. Asghari Heidarlou, Joshua A. Robinson, Susan K. Fullerton-Shirey
Publikováno v:
IEEE Transactions on Electron Devices. 67:1839-1844
Stepper-based batch fabrication of top-gated field-effect transistors (FETs) is demonstrated on few-layer WSe2-on-sapphire grown by chemical vapor deposition. This article reports the electrical characterization of 94 transistors with three different
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dbd8fe3dae928cc2ff96b358ce4a875
https://doi.org/10.1109/ted.2020.2974450
https://doi.org/10.1109/ted.2020.2974450
Autor:
Steve, Novakov, Bhakti, Jariwala, Nguyen M, Vu, Azimkhan, Kozhakhmetov, Joshua A, Robinson, John T, Heron
Publikováno v:
ACS applied materialsinterfaces. 13(11)
Rashba spin current generation emerges in heterostructures of ferromagnets and transition metal dichalcogenides (TMDs) due to an interface polarization and associated inversion symmetry breaking. Recent work exploring the synthesis and transfer of ep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f2beb0f900a92a7bb36702bb848f0d6c
https://pubmed.ncbi.nlm.nih.gov/33705093
https://pubmed.ncbi.nlm.nih.gov/33705093
Autor:
Subhadip, Das, Suchitra, Prasad, Biswanath, Chakraborty, Bhakti, Jariwala, Sai, Shradha, D V S, Muthu, Arnab, Bhattacharya, U V, Waghmare, A K, Sood
Publikováno v:
Nanoscale. 13(2)
In the bilayer ReS2 channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth for the in-plane vibrational modes, leaving the out-of-plan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c6a243d539df5aebe7e05e0de2573c34
https://pubmed.ncbi.nlm.nih.gov/33404576
https://pubmed.ncbi.nlm.nih.gov/33404576
Autor:
Subhadip Das, Arnab Bhattacharya, Biswanath Chakraborty, A. K. Sood, Umesh V. Waghmare, D. V. S. Muthu, Suchitra Prasad, Bhakti Jariwala, Sai Shradha
In the bilayer ReS$ _{2} $ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth of the in-plane vibrational modes, leaving out-of-pl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::71a5439bf03e6f0c34c28baf0c9e520b
Autor:
Dacen, Waters, Yifan, Nie, Felix, Lüpke, Yi, Pan, Stefan, Fölsch, Yu-Chuan, Lin, Bhakti, Jariwala, Kehao, Zhang, Chong, Wang, Hongyan, Lv, Kyeongjae, Cho, Di, Xiao, Joshua A, Robinson, Randall M, Feenstra
Publikováno v:
ACS nano. 14(6)
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment (θ = 0°), associated with flat bands in the Brillouin zone of the moiré pattern formed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::e76337f00204777367377822d0090ed8
https://pubmed.ncbi.nlm.nih.gov/32496750
https://pubmed.ncbi.nlm.nih.gov/32496750
Autor:
Joshua A. Robinson, Felix Lüpke, Yu-Chuan Lin, Chong Wang, Bhakti Jariwala, Di Xiao, Yifan Nie, Yi Pan, Hongyan Lv, Kehao Zhang, Randall M. Feenstra, Stefan Fölsch, Kyeongjae Cho, Dacen Waters
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment ($\theta=0^\circ$), associated with flat bands in the Brillouin zone of the moir\'e patter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::647252b7ef9a69d70a5ce53edcf99f7f
http://arxiv.org/abs/2004.07851
http://arxiv.org/abs/2004.07851
Autor:
Joseph R. Nasr, Joshua A. Robinson, Saptarshi Das, Shruti Subramanian, Rui Zhao, Nicholas A. Simonson, Bhakti Jariwala
Publikováno v:
FlatChem. 11:32-37
Industrially relevant substrates, such as amorphous oxides and metallic substrates, typically cannot withstand the elevated temperatures (>800 °C) required for metalorganic chemical vapor deposition (MOCVD), thus limiting the applicability of these
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::671c8374576f00d9cd77fb21398b06e5
https://doi.org/10.1016/j.flatc.2018.11.004
https://doi.org/10.1016/j.flatc.2018.11.004
Autor:
Baoming Wang, Joshua A. Robinson, Bhakti Jariwala, Tony Ivanov, Dmitry Ruzmetov, Kehao Zhang, Jun Li, Natalie Briggs, Haque, Robert A. Burke, Jordan O. Lerach, Randall M. Feenstra
Publikováno v:
Nanoscale. 10:336-341
Two and three-dimensional (2D/3D) hybrid materials have the potential to advance communication and sensing technologies by enabling new or improved device functionality. To date, most 2D/3D hybrid devices utilize mechanical exfoliation or post-synthe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e3ddecff634448ad2ca06b66bd67ec6
https://doi.org/10.1039/c7nr07586c
https://doi.org/10.1039/c7nr07586c
Autor:
Arnab Bhattacharya, Jonathan Noky, Osvaldo Del Pozo-Zamudio, Steffen Michaelis de Vasconcellos, Rudolf Bratschitsch, Thorsten Deilmann, Matthias Drüppel, Robert Schneider, Bhakti Jariwala, Robert Schmidt, Michael Rohlfing, Peter Krüger, Torsten Stiehm, Ashish Arora
Publikováno v:
Nano Letters. 17:3202-3207
Atomically thin materials such as graphene or MoS2 are of high in-plane symmetry. Crystals with reduced symmetry hold the promise for novel optoelectronic devices based on their anisotropy in current flow or light polarization. Here, we present polar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f94b6d70f9909974e0d9bdae4bb9385
https://doi.org/10.1021/acs.nanolett.7b00765
https://doi.org/10.1021/acs.nanolett.7b00765
Publikováno v:
SpringerBriefs in Materials ISBN: 9783319963396
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3afec412e4538fec20b836f3740a6009
https://doi.org/10.1007/978-3-319-96341-9
https://doi.org/10.1007/978-3-319-96341-9