Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Bhagawan Sahu"'
Autor:
Vimal Kamineni, Francis Benistant, Chengyu Niu, Praneet Adusumilli, Rajan K. Pandey, Anirudhha Konar, Phil Oldiges, Hemant Dixit, Xin Miao, Mark Raymond, Adra Carr, Bhagawan Sahu, Jody A. Fronheiser, Nicholas A. Lanzillo
Publikováno v:
IEEE Transactions on Electron Devices. 64:3775-3780
The metal–semiconductor interface is fundamental to any semiconductor device and the success of advanced technology nodes critically depends upon the minimization of the contact resistance at the interface. In this paper, we calculate the electroni
Autor:
Jessica S. Kachian, Naomi Yoshida, Randall M. Feenstra, Shariq Siddiqui, Bhagawan Sahu, Hyonwoong Kim, Evgueni Chagarov, Andrew C. Kummel, Sang Wook Park
Publikováno v:
Surface Science. 652:322-333
Passivation and functionalization via atomic hydrogen, hydrogen peroxide (H 2 O 2 ( g )), and trimethylaluminum (TMA) on clean silicon–germanium (Si 0.5 Ge 0.5 (110) and Si 0.47 Ge 0.53 (001)) surfaces were studied and compared at the atomic level
Autor:
Ximan Jiang, Mary Edmonds, Andrew C. Kummel, Naomi Yoshida, Rohit Galatage, Shariq Siddiqui, Lin Dong, Steven Wolf, Ravi Droopad, Bhagawan Sahu
Publikováno v:
ECS Transactions. 72:291-302
Channel passivation of SiGe and InGaAs requires removal of dangling bonds and formation of a thermally stable interface. On InGaAs, one solution is the deposition by self-limiting CVD or ALD of a few monolayer of silicon, silicon oxide, or silicon ni
Autor:
Paul C. McIntyre, Serge Oktyabrsky, Noami Yoshida, Bhagawan Sahu, Shailesh Madisetti, Hyonwoong Kim, Kasra Sardashti, Shariq Siddiqui, Kai-Ting Hu, Sang Wook Park, Andrew C. Kummel, Kechao Tang, Jessica S. Kachian
Publikováno v:
Applied Surface Science. 366:455-463
Sulfur passivation is used to electrically and chemically passivate the silicon–germanium (SiGe) surfaces before and during the atomic layer deposition (ALD) of aluminum oxide (Al 2 O 3 ). The electrical properties of the interfaces were examined b
Autor:
Evgueni Chagarov, Shailesh Madisetti, Tobin Kaufman-Osborn, Bhagawan Sahu, Kasra Sardashti, Andrew C. Kummel, Serge Oktyabrsky
Publikováno v:
ACS Applied Materials & Interfaces. 7:26275-26283
Density-functional theory molecular dynamics simulations were employed to investigate direct interfaces between a-Al2O3 and Si0.50Ge0.50 with Si- and Ge-terminations. The simulated stacks revealed mixed interfacial bonding. While Si-O and Ge-O bonds
Autor:
Sang Wook, Park, Jong Youn, Choi, Shariq, Siddiqui, Bhagawan, Sahu, Rohit, Galatage, Naomi, Yoshida, Jessica, Kachian, Andrew C, Kummel
Publikováno v:
The Journal of chemical physics. 146(5)
Si
Autor:
Bhagawan Sahu, Pranita Kerber, Terence B. Hook, Philip J. Oldiges, Andreas Scholze, Pierre Morin, K. Rim, Bruce B. Doris, Ali Khakifirooz, Pouya Hashemi, Darsen D. Lu, Bomsoo Kim
Publikováno v:
ECS Transactions. 64:337-345
We introduce SiGe FinFET device physics, process integration, and modeling considerations. Germanium is know to have a higher hole mobility than silicon. Enhancement of hole velocity due to lattice mismatch strain in SiGe epitaxy layers is significan
Autor:
Junli Wang, Matthew E. Colburn, Nelson Felix, Andreas Knorr, Tenko Yamashita, Charan V. V. S. Surisetty, Peter Zeitzoff, Dinesh Gupta, Y. Xu, Su Chen Fan, D. Park, Xin Miao, R. Divakaruni, Scott C. Johnson, Hiroaki Niimi, S. Lian, Balasubramanian S. Pranatharthi Haran, Andre Labonte, Eric R. Miller, Richard A. Conti, Shogo Mochizuki, Zhenxing Bi, M. Mottura, Bhagawan Sahu, Chengyu Niu, Donald F. Canaperi, John R. Sporre, James J. Demarest, Spyridon Skordas, Vamsi Paruchuri, Praneet Adusumilli, Seng Luan Lee, Lars W. Liebmann, Christopher Prindle, Walter Kleemeier, Oleg Gluschenkov, Peng Xu, Hemanth Jagannathan, Pietro Montanini, Rohit Galatage, Jody A. Fronheiser, Ruilong Xie, P. Oldiges, Neeraj Tripathi, Abraham Arceo, F. Lie, Robin Chao, Zuoguang Liu, D. Corliss, Stuart A. Sieg, Vimal Kamineni, Lee Choonghyun, Jeffrey C. Shearer, C. Labelle, J. Zhang, S. Kanakasabapathy, Stan D. Tsai, James Chingwei Li, Soon-Cheon Seo, H. Chen, H. P. Amanapu, Min Gyu Sung, Mark Raymond, Huiming Bu, Andrew M. Greene, Kisup Chung, Kerem Akarvardar, Sanjay Mehta, Richard G. Southwick, Chanro Park, C.-C. Yeh, John C. Arnold, K. Cheon, Myung-Hee Na, Mukesh Khare, Jungho Cha, Shariq Siddiqui, S. Whang, Lei Sun, Theodorus E. Standaert, Derren N. Dunn, Bassem Hamieh, T. Gow, Ki-chul Kim, Nicolas Loubet, Muthumanickam Sankarapandian, Terence B. Hook
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced
Autor:
Kerem Akarvardar, K-Y Lim, R. Mo, Bruce B. Doris, Richard G. Southwick, Muthumanickam Sankarapandian, F. Lie, Dechao Guo, Bhagawan Sahu, Huiming Bu, Stuart A. Sieg, Chun Wing Yeung, Junli Wang, Andreas Knorr, Tenko Yamashita, John R. Sporre, Matthew E. Colburn, Nelson Felix, Jody A. Fronheiser, D. K. Sadana, Neeraj Tripathi, Jay W. Strane, R. Divakaruni, P. Oldiges, Gauri Karve, Derrick Liu, T. Hook, Shogo Mochizuki, Nicolas Loubet, Sean D. Burns, Vijay Narayanan, Rajasekhar Venigalla, James Chingwei Li, Pouya Hashemi, Dinesh Gupta, Koji Watanabe, James J. Demarest, Victor Chan, Ruqiang Bao, S. Kanakasabapathy, Robert R. Robison, Mukesh Khare, Stephen W. Bedell, Pietro Montanini, Hemanth Jagannathan, Vamsi Paruchuri, Gen Tsutsui, Kangguo Cheng, James H. Stathis, James J. Kelly, Reinaldo A. Vega, Jacob Ajey Poovannummoottil, Miaomiao Wang
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
SiGe for channel material has been explored as a major technology element after the introduction of FINFET into CMOS technology [1–4]. Research on long channel FETs and discrete short channel FETs demonstrated benefits in mobility [1–4] and relia
Publikováno v:
Solid State Communications. 152:1497-1502
This paper reviews the theoretical work undertaken using density functional theory (DFT) to explore graphene's interactions with its surroundings. We look at the impact of substrates, gate dielectrics and edge effects on the properties of graphene. I