Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bhadresh Pathak"'
Autor:
N. Antoniades, Mohamed A. Ali, Roger Dorsinville, M. A. Ummy, Nicholas Madamopoulos, Bhadresh Pathak
Publikováno v:
Photonic Network Communications. 19:55-61
We experimentally demonstrate error free performance of a simple ring-based Ethernet Passive Optical Network (EPON) architecture that supports truly shared LAN capability among users as well as a fully distributed dynamic bandwidth allocation DBA sch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4d6c40a50faecb4326e241716d43e4
https://doi.org/10.1007/s11107-009-0210-1
https://doi.org/10.1007/s11107-009-0210-1
Autor:
F. Favire, M.A. Koza, Chung-En Zah, Nicholas C. Andreadakis, J. Gamelin, A. Rajhel, Paul S. D. Lin, C. Caneau, M.R. Amersfoort, Rajaram Bhat, Bhadresh Pathak
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:584-597
In this paper, we describe the design, fabrication and performance of multiwavelength DFB laser arrays with integrated combiner and optical amplifier built for wavelength-division-multiplexed (WDM) optical networks. The goal is to reduce the per-wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e1c8a730ce4f3f33913dcd641b231b
https://doi.org/10.1109/2944.605710
https://doi.org/10.1109/2944.605710
Autor:
Rajaram Bhat, J.J. Heieh, D. Flanders, M. C. Wang, Nicholas C. Andreadakis, F. Favire, D. Darby, Wei Lin, Tein-Pei Lee, Z. Wang, M.A. Koza, D. M. Hwang, Chung-En Zah, Bhadresh Pathak
Publikováno v:
IEEE Journal of Quantum Electronics. 30:511-523
Design considerations for fabricating highly efficient uncooled semiconductor lasers are discussed. The parameters investigated include the temperature characteristics of threshold current, quantum efficiency, and modulation speed. To prevent carrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f349fc5fcc7a7db7afbae4b60fde48a2
https://doi.org/10.1109/3.283799
https://doi.org/10.1109/3.283799
Autor:
Nicholas C. Andreadakis, Akihiko Kasukawa, Chung-En Zah, Rajaram Bhat, M.A. Koza, C. Caneau, Bhadresh Pathak, T.P. Lee
Publikováno v:
LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8287f6d8f10a42ae5e7c7783857b5fd
https://doi.org/10.1109/leosst.1991.638948
https://doi.org/10.1109/leosst.1991.638948
Publikováno v:
SPIE Proceedings.
The use of subcarrier multiplexing/multiple access (SCM/SCMA) is a simple and cost effective alternative to time division multiplexing/multiple access (TDM/TDMA) for creating multipoint connections in lightwave networks. The SCM/SCMA technique can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b905b1f4709d15dec06535541ff1b05
https://doi.org/10.1117/12.227832
https://doi.org/10.1117/12.227832
Autor:
Antoni S. Gozdz, T.P. Lee, Paul S. D. Lin, Bhadresh Pathak, Rajaram Bhat, Chung-En Zah, C. Caneau, F. Favire, Nicholas C. Andreadakis
Publikováno v:
SPIE Proceedings.
We have studied the effect of strain on the laser threshold current density in the 1.3 and 1.55 micrometers wavelength regions using both GaInAsP/InP and AlGaInAs/InP material systems. Low threshold current densities have been obtained for both compr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fce213b8981a174fd53b3f5b53a8058f
https://doi.org/10.1117/12.137605
https://doi.org/10.1117/12.137605
Autor:
Bhadresh Pathak, T. P. Lee, Nicholas C. Andreadakis, M.A. Koza, C. Caneau, Chung-En Zah, Akihiko Kasukawa, Rajaram Bhat
Publikováno v:
Japanese Journal of Applied Physics. 31:1365
Very low threshold current densities of 640 A/cm2, 400 A/cm2 and 200 A/cm2 were obtained in 1.5 µm GaInAs/AlGaInAs lattice matched, compressive and tensile strained-layer quantum well laser diodes (SL-QW LDs) respectively, grown by organometallic ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bc42e3176044c7c040da8cb19611de3
https://doi.org/10.1143/jjap.31.1365
https://doi.org/10.1143/jjap.31.1365
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