AC hot carrier transport in 3C- and 6H-SiC in the terahertz frequency and high lattice temperature regime

Autor: Bezerra, E. F., Caetano, E. W. S., Freire, V. N., Costa, J. A. P. da, Silva Jr., E. F. da

Publikováno v: Brazilian Journal of Physics v.32 n.2a 2002
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 32, Issue: 2a, Pages: 442-444, Published: JUN 2002

The complex mobility of electrons in 3C - and 6H-SiC subjected to intense high frequency electric fields is calculated taking into account effects of band nonparabolicity. The electric field, given by a dc component plus an ac component in the freque

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http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332002000200057

Interface Effects on the Raman Spectra of Si/3C-SiC Superlattices.

Autor: Bezerra, E. F., Filho, A. G. Souza, Filho, J. Mendes, Lemos, V., Freire, V. N., Ikoma, Y., Watanabe, F., Motooka, T.

Publikováno v: MRS Online Proceedings Library; 2000, Vol. 640 Issue 1, p1-4, 4p

High-temperature effects on the velocity overshoot of hot electrons in 6H- and 3C-SiC.

Autor: Bezerra, E. F., Caetano, E. W. S., Freire, V. N., Jr, E. F. da Silva, Costa, J. A. P. da

Publikováno v: Semiconductor Science & Technology; Nov1999, Vol. 14 Issue 11, p1-1, 1p