Zobrazeno 1 - 1
of 1
pro vyhledávání: '"Beux, S. Le"'
Autor:
Mukherjee, C., Deng, M., Marc, F., Maneux, C., Poittevin, A., OConnor, I., Beux, S. Le, Kumar, A., Lecestre, A., Larrieu, G.
Gate-all-around Vertical Nanowire Field Effect Transistors (VNWFET) are emerging devices, which are well suited to pursue scaling beyond lateral scaling limitations around 7nm. This work explores the relative merits and drawbacks of the technology in
Externí odkaz:
http://arxiv.org/abs/2005.14039
