Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Bethany X. Rutherford"'
Autor:
Bethany X. Rutherford, Di Zhang, Lizabeth Quigley, James P. Barnard, Bo Yang, Juanjuan Lu, Sundar Kunwar, Hongyi Dou, Jianan Shen, Aiping Chen, Haiyan Wang
Publikováno v:
Small Science, Vol 3, Iss 11, Pp n/a-n/a (2023)
Combinatorial growth is capable of creating a compositional gradient for thin film materials and thus has been adopted to explore composition variation mostly for metallic alloy thin films and some dopant concentrations for ceramic thin films. This s
Externí odkaz:
https://doaj.org/article/4d5b2d5bae8a464bb4ab3d128151798e
Autor:
Sundar Kunwar, Chase Bennett Somodi, Rebecca A. Lalk, Bethany X. Rutherford, Zachary Corey, Pinku Roy, Di Zhang, Markus Hellenbrand, Ming Xiao, Judith L. MacManus‐Driscoll, Quanxi Jia, Haiyan Wang, J. Joshua Yang, Wanyi Nie, Aiping Chen
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract Interface‐type (IT) resistive switching (RS) memories are promising for next generation memory and computing technologies owing to the filament‐free switching, high on/off ratio, low power consumption, and low spatial variability. Althou
Externí odkaz:
https://doaj.org/article/3d9b2711184d4c49929a092594e68df6
Autor:
Zachary J. Corey, Ping Lu, Guangran Zhang, Yogesh Sharma, Bethany X. Rutherford, Samyak Dhole, Pinku Roy, Zhehui Wang, Yiquan Wu, Haiyan Wang, Aiping Chen, Quanxi Jia
Publikováno v:
Advanced Science, Vol 9, Iss 29, Pp n/a-n/a (2022)
Abstract Mixtures of Ce‐doped rare‐earth aluminum perovskites are drawing a significant amount of attention as potential scintillating devices. However, the synthesis of complex perovskite systems leads to many challenges. Designing the A‐site
Externí odkaz:
https://doaj.org/article/bb318904cd5043c79ca43f69ddba4d37
Publikováno v:
ACS Omega, Vol 5, Iss 37, Pp 23793-23798 (2020)
Externí odkaz:
https://doaj.org/article/4b68e2579ff54c7a9ed8c18ebe62eb62
Autor:
Bethany X. Rutherford, Hongyi Dou, Bruce Zhang, Zihao He, James P. Barnard, Robynne L. Paldi, Haiyan Wang
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3460 (2022)
Nanocomposite thin film materials present great opportunities in coupling materials and functionalities in unique nanostructures including nanoparticles-in-matrix, vertically aligned nanocomposites (VANs), and nanolayers. Interestingly the nanocompos
Externí odkaz:
https://doaj.org/article/d4380d7e3102437a9e8df19d14065fe7
Autor:
Matias Kalaswad, Di Zhang, Bethany X. Rutherford, Juanjuan Lu, James P. Barnard, Zihao He, Juncheng Liu, Haohan Wang, Xiaoshan Xu, Haiyan Wang
Publikováno v:
Crystals, Vol 12, Iss 6, p 849 (2022)
Transition metal nitrides such as titanium nitride (TiN) possess exceptional mechanical-, chemical-, and thermal-stability and have been utilized in a wide variety of applications ranging from super-hard, corrosion-resistive, and decorative coatings
Externí odkaz:
https://doaj.org/article/d5079ee5c6e9420dbfafbb945f2b471b
Autor:
Bethany X. Rutherford, Bruce Zhang, Matias Kalaswad, Zihao He, Di Zhang, Xuejing Wang, Juncheng Liu, Haiyan Wang
Publikováno v:
ACS Applied Nano Materials. 5:6297-6304
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a63acd99fbf695bec12655e9700363ac
https://doi.org/10.1021/acsanm.2c00394
https://doi.org/10.1021/acsanm.2c00394
Autor:
Sundar Kunwar, Chase Bennett Somodi, Rebecca A. Lalk, Bethany X. Rutherford, Zachary Corey, Pinku Roy, Di Zhang, Markus Hellenbrand, Ming Xiao, Judith L. MacManus‐Driscoll, Quanxi Jia, Haiyan Wang, J. Joshua Yang, Wanyi Nie, Aiping Chen
Publikováno v:
Advanced Electronic Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e260486c43726d431eae8886709f42f
https://doi.org/10.1002/aelm.202200816
https://doi.org/10.1002/aelm.202200816
Autor:
Bethany X. Rutherford, Matias Kalaswad, Xuejing Wang, Di Zhang, Ping Lu, Haiyan Wang, Xingyao Gao, Zihao He
Publikováno v:
Nanoscale. 13:16672-16679
Two-dimensional (2D) materials with robust ferromagnetic behavior have attracted great interest because of their potential applications in next-generation nanoelectronic devices. Aside from graphene and transition metal dichalcogenides, Bi-based laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bff11d3939b3a94ddf7cba84080bed61
https://doi.org/10.1039/d1nr04975e
https://doi.org/10.1039/d1nr04975e
Autor:
Pinku Roy, Sundar Kunwar, Di Zhang, Di Chen, Zachary Corey, Bethany X. Rutherford, Haiyan Wang, Judith L. MacManus‐Driscoll, Quanxi Jia, Aiping Chen
Publikováno v:
Advanced Electronic Materials
Funder: NNSA's Laboratory Directed Research and Development Program
Advancement of information technology requires low power, high speed, and large capacity non‐volatile memory. Memristors have potential applications for not only information s
Advancement of information technology requires low power, high speed, and large capacity non‐volatile memory. Memristors have potential applications for not only information s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e3fc45f7b8f15dd3492c4a597926850
https://www.repository.cam.ac.uk/handle/1810/335616
https://www.repository.cam.ac.uk/handle/1810/335616
