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pro vyhledávání: '"Beshkov Georgi D"'
Comparative Study of SiNx and BNx Nanolayers Prepared by Different Chemical Vapor Deposition Methods
Autor:
Benjamin V. Salas, Beshkov Georgi D, Juan Terrazas, Dencho Spassov, Nikola Nedev, Krastev Veselin J
Publikováno v:
ECS Transactions. 25:845-851
In this work IR and EDX spectra, SEM micrographs as well as etching rates of silicon nitride films deposited by different Chemical Vapor Deposition (CVD) processes are presented. SiNx layers were obtained by Atmospheric Pressure CVD (APCVD), Low Pres
Publikováno v:
Journal of Materials Research. 12:2511-2514
In this work the properties of polycrystalline silicon layers obtained by rapid thermal annealing have been discussed. Amorphous silicon layers with thickness of 3000 Å have been deposited on silicon wafers in rf sputtering system. The layers were a
Autor:
Dimitrov Dimitar B, Kroum M. Kolentsov, Beshkov Georgi D, Lilyana S. Yourukova, M. T. Kamenova, A. S. Rachkova
Publikováno v:
SPIE Proceedings.
The influence of an additional high-temperature treatment of SnO2 : F thin films prepared on silicon substrates is studied. The films are deposited by a spray pyrolytic technique at various substrate temperatures and deposition times. As-deposited Sn
Publikováno v:
Journal of Physics: Conference Series. 113:012046
The possibility was examined to prepare BNx layers using rapid thermal annealing of thin B films in NH3 (at four different annealing temperatures and annealing times). X-ray photoelectron spectroscopy (XPS) was employed to investigate the composition
Autor:
Beshkov, Georgi D., Kolentsov, Kroum M., Dimitrov, D. B., Yourukova, Lilyana S., Rachkova, A. S., Kamenova, M. T.
Publikováno v:
Proceedings of SPIE; Nov1993, Issue 1, p75-81, 7p