Zobrazeno 1 - 10
of 317
pro vyhledávání: '"Bertru, N."'
Here, we comprehensively investigate the atomic structures and electronic properties of different antiphase boundaries in III-V semiconductors with different orientations and stoichiometries, including {110}, {100}, {111}, {112} and {113} ones, based
Externí odkaz:
http://arxiv.org/abs/2206.01571
Autor:
Cornet, C., Charbonnier, S., Lucci, I., Chen, L., Letoublon, A., Alvarez, A., Tavernier, K., Rohel, T., Bernard, R., Rodriguez, J. -B., Cerutti, L., Tournie, E., Leger, Y., Patriarche, G., Largeau, L., Ponchet, A., Turban, P., Bertru, N.
Publikováno v:
Phys. Rev. Materials 4, 053401 (2020)
Here, we clarify the central role of the miscut during group III-V/ group IV crystal growth. We show that the miscut first impacts the initial antiphase domain distribution, with two distinct nucleation-driven and terraces-driven regimes. It is then
Externí odkaz:
http://arxiv.org/abs/2001.05386
Autor:
Lucci, I., Charbonnier, S., Pedesseau, L., Vallet, M., Cerutti, L., Rodriguez, J. -B., Tournie, E., Bernard, R., Letoublon, A., Bertru, N., Corre, A. Le, Rennesson, S., Semond, F., Patriarche, G., Largeau, L., Turban, P., Ponchet, A., Cornet, C.
Publikováno v:
Phys. Rev. Materials 2, 060401 (2018)
Here, we experimentally and theoretically clarify III-V/Si crystal growth processes. Atomically-resolved microscopy shows that mono-domain 3D islands are observed at the early stages of AlSb, AlN and GaP epitaxy on Si, independently of misfit. It is
Externí odkaz:
http://arxiv.org/abs/1804.02358
Autor:
Keizer, J. G., Bozkurt, M., Bocquel, J., Koenraad, P. M., Mano, T., Noda, T., Sakoda, K., Clark, E. C., Bichler, M., Abstreiter, G., Finley, J. J., Lu, W., Rohel, T., Folliot, H., Bertru, N.
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). The result shows that application of an indium flush during the growth
Externí odkaz:
http://arxiv.org/abs/1011.3316
Autor:
Tremblay, R., Burin, J.-P., Rohel, T., Gauthier, J.-P., Almosni, S., Quinci, T., Létoublon, A., Léger, Y., Le Corre, A., Bertru, N., Durand, O., Cornet, C.
Publikováno v:
In Journal of Crystal Growth 15 May 2017 466:6-15
Autor:
Nguyen Thanh, T., Robert, C., Létoublon, A., Cornet, C., Quinci, T., Giudicelli, E., Almosni, S., Boudet, N., Ponchet, A., Kuyyalil, J., Danila, M., Durand, O., Bertru, N., Le Corre, A.
Publikováno v:
In Thin Solid Films 31 August 2013 541:36-40
Autor:
Guo, W., Bondi, A., Cornet, C., Létoublon, A., Durand, O., Rohel, T., Boyer-Richard, S., Bertru, N., Loualiche, S., Even, J., Le Corre, A.
Publikováno v:
In Applied Surface Science 15 January 2012 258(7):2808-2815
Autor:
Létoublon, A., Guo, W., Cornet, C., Boulle, A., Véron, M., Bondi, A., Durand, O., Rohel, T., Dehaese, O., Chevalier, N., Bertru, N., Le Corre, A.
Publikováno v:
In Journal of Crystal Growth 15 May 2011 323(1):409-412
Publikováno v:
In Acta Materialia 2010 58(9):3238-3246
Publikováno v:
In Journal of Crystal Growth 15 April 2009 311(9):2626-2629