Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Bertrand Ardouin"'
Autor:
Bertrand Ardouin, Christian Raya, Chandan Yadav, Marina Deng, Thomas Zimmer, Xin Wen, Chhandak Mukherjee, Mathieu Luisier, Wei Quan, Akshay M. Arabhavi, Sebastien Fregonese, Colombo R. Bolognesi, Cristell Maneux, Magali De Matos
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (12), pp.5441-5447. ⟨10.1109/TED.2020.3033834⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67 (12), pp.5441-5447. ⟨10.1109/TED.2020.3033834⟩
This article reports a detailed approach toward optimization of on-wafer thru-reflect-line (TRL) calibration structures for submillimeter-wave characterization of a state-of-the-art indium-phosphide (InP) technology, validated by thorough experimenta
Autor:
Nil Davy, Virginie Nodjiadjim, Muriel Riet, Colin Mismer, Marina Deng, Chhandak Mukherjee, Bertrand Ardouin, Cristell Maneux
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. :1-1
A Multiscale TCAD Approach for the Simulation of InP DHBTs and the Extraction of Their Transit Times
Autor:
Sebastien Fregonese, Bertrand Ardouin, Christian Raya, Marina Deng, Colombos Bolognesi, Chhandak Mukherjee, Wei Quan, Akshay M. Arabhavi, Mathieu Luisier, Xin Wen, Cristell Maneux, Thomas Zimmer, Olivier Ostinelli, Virginie Nodjiadjim, Muriel Riet
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/TED.2019.2946514⟩
IEEE Transactions on Electron Devices, 66 (12)
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5084-5090. ⟨10.1109/TED.2019.2946514⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, In press, ⟨10.1109/TED.2019.2946514⟩
IEEE Transactions on Electron Devices, 66 (12)
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5084-5090. ⟨10.1109/TED.2019.2946514⟩
International audience; A multiscale technology computer-aided design (TCAD) simulation methodology is presented to calculate the intrinsic transit time of InP double heterojunction bipolar transistors (DHBTs). A 2-D hyd-rodynamic (HD) simulator is e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4663851154096ab324808f478b5ade34
https://hal.archives-ouvertes.fr/hal-02379133
https://hal.archives-ouvertes.fr/hal-02379133
Autor:
Chhandak Mukherjee, Akshay M. Arabhavi, Wei Quan, Mathieu Luisier, Bertrand Ardouin, Thomas Zimmer, Marina Deng, Christian Raya, Sebastien Fregonese, Colombo R. Bolognesi, Cristell Maneux, Muriel Riet, Virginie Nodjiadjim, Jean-Yves Dupuy
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (12), pp.5357-5364
HAL
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (12), pp.5357-5364
HAL
We investigate the bias, temperature, and frequency dependence of two III–V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multigeometry scalable parameter e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7479e5bdf6661ce0e289bcb40f396a3
https://hal.archives-ouvertes.fr/hal-01985507
https://hal.archives-ouvertes.fr/hal-01985507
Autor:
François Marc, Bertrand Ardouin, Thomas Zimmer, Chhandak Mukherjee, Muriel Riet, Cristell Maneux, Jean-Yves Dupuy, Virginie Nodjiadjim
Publikováno v:
IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2017, 17 (3), pp.490-506. ⟨10.1109/TDMR.2017.2710303⟩
IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.490-506. ⟨10.1109/TDMR.2017.2710303⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2017, 17 (3), pp.490-506. ⟨10.1109/TDMR.2017.2710303⟩
IEEE Transactions on Device and Materials Reliability, 2017, 17 (3), pp.490-506. ⟨10.1109/TDMR.2017.2710303⟩
This paper focuses on efficient reliability analysis methodologies applicable for beyond-5G communication systems demonstrated on prospective terahertz (THz) technologies. Recently, a lot of the research interests have grown on optoelectronic integra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::312921197a8ee5729d91da2f5bca6af6
https://hal.archives-ouvertes.fr/hal-01670929
https://hal.archives-ouvertes.fr/hal-01670929
Autor:
Manuel Potereau, Cédric Ayela, Marina Deng, Magali De Matos, Arnaud Curutchet, Christian Raya, Klaus Aufinger, Bertrand Ardouin, Thomas Zimmer, Sebastien Fregonese
Publikováno v:
EuMW 2016
EuMW 2016, 2016, Londres, United Kingdom
HAL
EuMW 2016, 2016, Londres, United Kingdom
HAL
An on-wafer TRL methodology based on meander type transmission lines was developed in the perspective of automated on-waver calibration. The TRL calibrations using meander lines and standard straight lines showed no significant difference when applie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e565483aaa9ac6485935b50386036c3
https://hal.archives-ouvertes.fr/hal-01301312
https://hal.archives-ouvertes.fr/hal-01301312
Autor:
Klaus Aufinger, Bertrand Ardouin, S. Lehmann, Andreas Pawlak, Michael Schroter, Paulius Sakalas, Julia Krause
Publikováno v:
2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear
Autor:
Rosario D'Esposito, Sebastien Fregonese, Thomas Zimmer, A. Mukherjee, M. De Matos, Ullrich R. Pfeiffer, Stefan Malz, Michael Schroter, Christian Raya, Klaus Aufinger, Bertrand Ardouin
Publikováno v:
proceeding of the Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE
proceeding of the Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE, IEEE, Oct 2015, New Orleans, LA, USA, United States. ⟨10.1109/CSICS.2015.7314492⟩
proceeding of the Compound Semiconductor Integrated Circuit Symposium (CSICS), 2015 IEEE, IEEE, Oct 2015, New Orleans, LA, USA, United States. ⟨10.1109/CSICS.2015.7314492⟩
This paper presents a methodology for compact model evaluation and validation at circuit level for RF and mm-wave applications. Accurate compact models are a prerequisite for efficient circuit design but currently modeling engineers lack of suitable
Autor:
W. Kraus, Michael Schroter, Thomas Zimmer, Bertrand Ardouin, P. Brenner, Helene Beckrich, Sebastien Fregonese, S. Lehmann, Didier Celi
Publikováno v:
IEEE Transactions on Electron Devices. 53:287-295
A compact bipolar transistor model was presented in Part I that combines the simplicity of the SPICE Gummel-Poon model (SGPM) with some major features of HICUM. The new model, called HICUM/L0, is more physics-based and accurate than the SGPM but at t
Autor:
Magali De Matos, Bertrand Ardouin, Manuel Potereau, Min Zhang, Christian Raya, Sebastien Fregonese, Arnaud Curutchet, Thomas Zimmer
Publikováno v:
ECC 2013
ECC 2013 conference
ECC 2013 conference, Nov 2013, Sanya, China
ECC 2013 conference
ECC 2013 conference, Nov 2013, Sanya, China
This paper investigates frequency limitations of calibration and de-embedding techniques for S parameter measurements. First, the TRL calibration methods are analysed and the error due to the probe movement when measuring the different line lengths i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::843c9e764d3efc96968fee66ff220d26
https://hal.archives-ouvertes.fr/hal-00909399
https://hal.archives-ouvertes.fr/hal-00909399