Zobrazeno 1 - 10
of 4 925
pro vyhledávání: '"Bertrán, A."'
Autor:
P., Sajilesh K., Gofman, Roni Anna, Nitzav, Yuval, Almoalem, Avior, Mangel, Ilay, Shiroka, Toni, Plumb, Nicholas C., Bigi, Chiara, Bertran, Francois, Sánchez-Barriga, J., Kanigel, Amit
Exploiting the spin-valley degree of freedom of electrons in materials is a promising avenue for energy-efficient information storage and quantum computing. A key challenge in utilizing spin-valley polarization is the realization of spin-valley locki
Externí odkaz:
http://arxiv.org/abs/2411.07624
Autor:
Bigi, Chiara, Dürrnagel, Matteo, Klebl, Lennart, Consiglio, Armando, Pokharel, Ganesh, Bertran, Francois, Févre, Patrick Le, Jaouen, Thomas, Tchouekem, Hulerich C., Turban, Pascal, De Vita, Alessandro, Miwa, Jill A., Wells, Justin W., Oh, Dongjin, Comin, Riccardo, Thomale, Ronny, Zeljkovic, Ilija, Ortiz, Brenden R., Wilson, Stephen D., Sangiovanni, Giorgio, Mazzola, Federico, Di Sante, Domenico
Among many-body instabilities in correlated quantum systems, electronic nematicity, defined by the spontaneous breaking of rotational symmetry, has emerged as a critical phenomenon, particularly within high-temperature superconductors. Recently, this
Externí odkaz:
http://arxiv.org/abs/2410.22929
Autor:
Bertran, Michael A. Hernandez, Dominguez, Diana Zapata, Berhaut, Christopher, Tardif, Samuel, Longo, Alessandro, Sahle, Christoph, Cavallari, Chiara, Marri, Ivan, Herlin-Boime, Nathalie, Molinari, Elisa, Pouget, Stéphanie, Prezzi, Deborah, Lyonnard, Sandrine
During the first charge-discharge cycle, silicon-based batteries show an important capacity loss because of the formation of the solid electrolyte interphase (SEI) and morphological changes due to expansion-contraction sequence upon alloying. To unde
Externí odkaz:
http://arxiv.org/abs/2410.05794
Large Language Models (LLMs) have the promise to revolutionize computing broadly, but their complexity and extensive training data also expose significant privacy vulnerabilities. One of the simplest privacy risks associated with LLMs is their suscep
Externí odkaz:
http://arxiv.org/abs/2409.14513
Autor:
Bernárdez, Guillermo, Telyatnikov, Lev, Montagna, Marco, Baccini, Federica, Papillon, Mathilde, Ferriol-Galmés, Miquel, Hajij, Mustafa, Papamarkou, Theodore, Bucarelli, Maria Sofia, Zaghen, Olga, Mathe, Johan, Myers, Audun, Mahan, Scott, Lillemark, Hansen, Vadgama, Sharvaree, Bekkers, Erik, Doster, Tim, Emerson, Tegan, Kvinge, Henry, Agate, Katrina, Ahmed, Nesreen K, Bai, Pengfei, Banf, Michael, Battiloro, Claudio, Beketov, Maxim, Bogdan, Paul, Carrasco, Martin, Cavallo, Andrea, Choi, Yun Young, Dasoulas, George, Elphick, Matouš, Escalona, Giordan, Filipiak, Dominik, Fritze, Halley, Gebhart, Thomas, Gil-Sorribes, Manel, Goomanee, Salvish, Guallar, Victor, Imasheva, Liliya, Irimia, Andrei, Jin, Hongwei, Johnson, Graham, Kanakaris, Nikos, Koloski, Boshko, Kovač, Veljko, Lecha, Manuel, Lee, Minho, Leroy, Pierrick, Long, Theodore, Magai, German, Martinez, Alvaro, Masden, Marissa, Mežnar, Sebastian, Miquel-Oliver, Bertran, Molina, Alexis, Nikitin, Alexander, Nurisso, Marco, Piekenbrock, Matt, Qin, Yu, Rygiel, Patryk, Salatiello, Alessandro, Schattauer, Max, Snopov, Pavel, Suk, Julian, Sánchez, Valentina, Tec, Mauricio, Vaccarino, Francesco, Verhellen, Jonas, Wantiez, Frederic, Weers, Alexander, Zajec, Patrik, Škrlj, Blaž, Miolane, Nina
This paper describes the 2nd edition of the ICML Topological Deep Learning Challenge that was hosted within the ICML 2024 ELLIS Workshop on Geometry-grounded Representation Learning and Generative Modeling (GRaM). The challenge focused on the problem
Externí odkaz:
http://arxiv.org/abs/2409.05211
Autor:
Cheng, Erjian, Mao, Ning, Yang, Xiaotian, Song, Boqing, Lou, Rui, Ying, Tianping, Nie, Simin, Fedorov, Alexander, Bertran, François, Ding, Pengfei, Suvorov, Oleksandr, Zhang, Shu, Changdar, Susmita, Schnelle, Walter, Koban, Ralf, Yi, Changjiang, Burkhardt, Ulrich, Büchner, Bernd, Wang, Shancai, Zhang, Yang, Wang, Wenbo, Felser, Claudia
Kagome materials with magnetic frustration in two-dimensional networks are known for their exotic properties, such as the anomalous Hall effect (AHE) with non-collinear spin textures. However, the effects of one-dimensional (1D) spin chains within th
Externí odkaz:
http://arxiv.org/abs/2409.01365
Autor:
Fèvre, Patrick Le, Salazar, Raphaël, Jamet, Matthieu, Bertran, François, Bigi, Chiara, Ourghi, Abdelkarim, Vergnaud, Céline, Pulkkinen, Aki, Minar, Jan, Jaouen, Thomas, Rault, Julien
Transition Metal Dichalcogenides (TMD) are layered materials obtained by stacking two-dimensional sheets weakly bonded by van der Waals interactions. In bulk TMD, band dispersions are observed in the direction normal to the sheet plane (z-direction)
Externí odkaz:
http://arxiv.org/abs/2407.03768
Autor:
Bertran, Martin, Tang, Shuai, Kearns, Michael, Morgenstern, Jamie, Roth, Aaron, Wu, Zhiwei Steven
Machine unlearning is motivated by desire for data autonomy: a person can request to have their data's influence removed from deployed models, and those models should be updated as if they were retrained without the person's data. We show that, count
Externí odkaz:
http://arxiv.org/abs/2405.20272
Autor:
Khaled, Mohamed Ali, Cancellara, Leonardo, Fekraoui, Salima, Daubriac, Richard, Bertran, François, Bigi, Chiara, Gravelier, Quentin, Monflier, Richard, Arnoult, Alexandre, Durand, Corentin, Plissard, Sébastien
Topological insulators (TI) are promising materials for future spintronics applications and their epitaxial integration would allow the realization of new hybrid interfaces. As the first materials studied, Bismuth Antimony alloys (Bi1-xSbx) show grea
Externí odkaz:
http://arxiv.org/abs/2405.14450
Autor:
Llopez, Alexandre, Leroy, Frédéric, Tagne-Kaegom, Calvin, Croes, Boris, Michon, Adrien, Mastropasqua, Chiara, Khalfioui, Mohamed Al, Curiotto, Stefano, Müller, Pierre, Saùl, Andrés, Kierren, Bertrand, Kremer, Geoffroy, Fèvre, Patrick Le, Bertran, François, Fagot-Revurat, Yannick, Cheynis, Fabien
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular bea
Externí odkaz:
http://arxiv.org/abs/2404.09543