Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Bert Vermeire"'
Autor:
Bert Vermeire, David L. Hansen
Publikováno v:
2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC).
Autor:
Norman Hall, Bert Vermeire, Josh Shields, Slaven Moro, Randall Milanowski, Raichelle Aniceto, Kerri Cahoy
Publikováno v:
2018 IEEE Nuclear & Space Radiation Effects Conference (NSREC 2018).
Total ionizing dose testing of commercial 200 V PMOSFETs. At 100 kRad(Si), observed V t increase of ∼ 3 V for biased ON devices and increase of ∼ 1 V for biased OFF devices. The R ds_on did not degrade with dose.
Publikováno v:
IEEE Transactions on Nuclear Science. 62:1658-1664
Current gain degradation in irradiated bipolar junction transistors is primarily due to excess base current caused by enhanced carrier recombination in the emitter-base space-charge region (SCR). Radiation-induced traps at the interface between silic
Publikováno v:
2017 17th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We provide proton radiation test results for three commercial analog integrated circuits that have no space-qualified equivalents. Results suggest the components are suitable for some space applications. Additional testing for Enhanced Low Dose Rate
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
We report proton testing of a position measuring system, the Kaman KD-5100, with applications including mirror positioning for laser beam control. We measure a device response likely due to total ionizing dose and/or displacement damage.
Autor:
Raichelle Aniceto, Slaven Moro, Randall Milanowski, Christopher Isabelle, Kerri Cahoy, Bert Vermeire, Norman Hall
Publikováno v:
Prof. Cahoy via Barbara Williams
© 2017 IEEE. Experimental assessment of commercial 100/200 Gbps optical coherent DSP modem ASIC completed with 64 MeV and 480 MeV proton radiation test campaigns. Single event effect cross sections calculated and no performance degradation observed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f5767009a6dacfc054517d7eed386c3
https://hdl.handle.net/1721.1/137994
https://hdl.handle.net/1721.1/137994
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10−4 cm2/device.
Autor:
Kerri Cahoy, Slaven Moro, Raichelle Aniceto, Randall Milanowski, Michael Jacox, Fred Hardy, Bert Vermeire
Publikováno v:
Prof. Cahoy via Barbara Williams
© 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with a
Autor:
Bert Vermeire
Publikováno v:
34th AIAA International Communications Satellite Systems Conference.
Autor:
Elettra Venosa, Fred Harris, Charles J. Sheehe, David Strobel, Arwan Krunz, Bert Vermeire, Cameron Alakija
Publikováno v:
2016 Integrated Communications Navigation and Surveillance (ICNS).
In the last few years, radio technologies for unmanned aircraft vehicle (UAV) have advanced very rapidly. The increasing need to fly unmanned aircraft systems (UAS) in the national airspace system (NAS) to perform missions of vital importance to nati