Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Bert Kerr"'
Publikováno v:
ECS Transactions. 80:1005-1015
It is well-known that band-to-trap tunneling processes in semiconductor devices cause a significant increase in terminal currents under high electric fields [1-3]. Standard band-to-trap tunneling models such as those by Schenk [1-2] and Hurkx [3] are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e9ad7755d07ff16339bd41d8b661c250
https://doi.org/10.1149/08010.1005ecst
https://doi.org/10.1149/08010.1005ecst
Publikováno v:
2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We present an analytic band-to-trap tunneling model developed using the open boundary scattering approach. The new model explicitly includes the effect of heterojunction band offset, in addition to the well known electric field effect. Its analytic f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10a5ada5e87c0d1891620509717935c8
https://doi.org/10.1109/sispad.2018.8551622
https://doi.org/10.1109/sispad.2018.8551622
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Photocurrent generated by ionizing radiation represents a threat to microelectronics in radiation environments. Circuit simulation tools that employ compact models for individual electrical components (SPICE, e.g.) are often used to analyze these thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a5b4a7ea369e760585050a8dc9465e
https://doi.org/10.1109/sispad.2013.6650616
https://doi.org/10.1109/sispad.2013.6650616
A new time-dependent analytic model for radiation-induced photocurrent in finite 1D epitaxial diodes
Photocurrent generated by ionizing radiation represents a threat to microelectronics in radiation environments. Circuit simulation tools such as SPICE [1] can be used to analyze these threats, and typically rely on compact models for individual elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c47568caa6358e5143c90831f0ff46
https://doi.org/10.2172/1039400
https://doi.org/10.2172/1039400
Circuit simulation tools (e.g., SPICE) have become invaluable in the development and design of electronic circuits in radiation environments. These codes are often employed to study the effect of many thousands of devices under transient current cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af4567f5a388af5046d30de54acdeba0
https://doi.org/10.2172/1018469
https://doi.org/10.2172/1018469
Publikováno v:
IEEE Transactions on Nuclear Science.
Circuit simulation codes, such as SPICE, are invaluable in the development and design of electronic circuits in radiation environments. These codes are often employed to study the effect of many thousands of devices under transient current conditions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::323433b06f802d48da7b13efe0c215c6
https://doi.org/10.1109/tns.2010.2086484
https://doi.org/10.1109/tns.2010.2086484
Publikováno v:
The American Mathematical Monthly. 111:445
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34716a6e1503780dfcf444e7252f403
https://doi.org/10.2307/4145286
https://doi.org/10.2307/4145286