Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Bert K. Oyama"'
Publikováno v:
IEEE Journal of Solid-State Circuits. 48:2265-2272
A prototype 13-b 1.33-Gsps digital-to-analog converter (DAC) implemented in a unique heterogeneous integration process (combining 0.45-μm InP HBT with 0.18-μm CMOS) is presented. Measured performance of greater than 70 dB SFDR is achieved across a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eae726d284a8aded2e03876f28c2b80e
https://doi.org/10.1109/jssc.2013.2261191
https://doi.org/10.1109/jssc.2013.2261191
Autor:
E. Kaneshiro, Kenneth F Sato, Augusto Gutierrez-Aitken, P.C. Chang, Aaron K. Oki, Cedric Monier, L. Dang, Matt D'Amore, Dennis W. Scott, Alex Niemi, Steven Taiyu Lin, Abdullah Cavus, Bert K. Oyama
Publikováno v:
IEEE Journal of Solid-State Circuits. 45:1992-2002
Static frequency dividers are widely used technology performance benchmark circuits. Using a 0.25 μm 530 GHz fT /600 GHz+ fmax InP DHBT process, a static frequency divider circuit has been designed, fabricated, and measured to operate up to 200.6 GH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf4520bd8442c9342e7ff21d81247bab
https://doi.org/10.1109/jssc.2010.2058171
https://doi.org/10.1109/jssc.2010.2058171
Publikováno v:
IEEE Journal of Solid-State Circuits. 43:2187-2193
An ultra-wideband 7-bit 5-Gsps analog-to-digital converter (ADC), fabricated in a 4-level interconnect, 0.8 mum Indium-Phosphide (InP) heterojunction bipolar transistor (HBT) technology, is presented. This monolithic folding/interpolating ADC include
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95845b268004362af2cf1ce2bcd374c3
https://doi.org/10.1109/jssc.2008.2002932
https://doi.org/10.1109/jssc.2008.2002932
Autor:
Khanh Thai, Nancy Lin, E. Kaneshiro, Kelly Hennig, Reynold Kagiwada, Bert K. Oyama, Greg Chao, Wesley Chan, K. Sato, Augusto Gutierrez-Aitken, Xiang Zeng, Cedric Monier, Dennis W. Scott, Eric Nakamura, Aaron K. Oki, Benjamin Poust, Ioulia Smorchkova
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::095ce7f3c82414a8508ee3f7036f62fc
https://doi.org/10.1109/csics.2014.6978550
https://doi.org/10.1109/csics.2014.6978550
Autor:
N. Cohen, Khanh Thai, Vipul J. Patel, E. Kaneshiro, Daniel Ching, J. Chen, Augusto Gutierrez-Aitken, Peter Nam, Kelly Hennig, Bert K. Oyama, Patty Chang-Chien, Dennis W. Scott
Publikováno v:
2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Gigahertz-rate Digital-to-Analog Converters (DACs) have become readily available from several commercial vendors but have been unable to achieve >70 dB spurious-free dynamic range (SFDR) performance over a wide bandwidth (≥500MHz). This paper prese
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8543af0a6f7887fab08e403f52a1d222
https://doi.org/10.1109/csics.2012.6340082
https://doi.org/10.1109/csics.2012.6340082
Autor:
Khanh Thai, Dennis W. Scott, Joe Zhou, Kelly Hennig, Peter Nam, Reynold Kagiwada, Randy Sandhu, Bert K. Oyama, Aaron K. Oki, Augusto Gutierrez-Aitken, Wen Phan, Patty Chang-Chien, Ben Poust, Craig Geiger, E. Kaneshiro, Neir Cohen, Daniel Ching, Matthew Parlee
Publikováno v:
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The obj
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5336033ee53febd87e75d20d39f92a77
https://doi.org/10.1109/csics.2010.5619667
https://doi.org/10.1109/csics.2010.5619667
Autor:
Matt D'Amore, Steven Taiyu Lin, Beckie Chan, P. C. Chang, Augusto Gutierrez-Aitken, E. Kaneshiro, K. Sato, Cedric Monier, Dennis W. Scott, Abdullah Cavus, Bert K. Oyama, Aaron K. Oki
Publikováno v:
2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.
Northrop Grumman Aerospace Systems (NGAS) has been developing InP-based heterojunction bipolar transistor technology for next generation high performance aerospace, defense and commercial applications. We present highlights and status of our producti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bf3787089b1a4031e4c8984849c19b7
https://doi.org/10.1109/csics.2009.5315670
https://doi.org/10.1109/csics.2009.5315670