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Negative oxygen vacancies in HfO$_2$ as charge traps in high-k stacks

Autor: Gavartin, J. L., Ramo, D. Munoz, Shluger, A. L., Bersuker, G., Lee, B. H.

We calculated the optical excitation and thermal ionization energies of oxygen vacancies in m-HfO$_2$ using atomic basis sets, a non-local density functional and periodic supercell. The thermal ionization energies of negatively charged V$^-$ and V$^{

Externí odkaz: http://arxiv.org/abs/cond-mat/0605593

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The role of nitrogen related defects in high-k dielectric oxides: Density functional studies

Autor: Gavartin, J. L., Foster, A. S., Bersuker, G. I., Shluger, A. L.

Using ab initio density functional total energy and molecular dynamics simulations, we study the effects of various forms of nitrogen post deposition anneal (PDA) on the electric properties of hafnia in the context of its application as a gate dielec

Externí odkaz: http://arxiv.org/abs/cond-mat/0410088

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Akademický článek

Ultra-fast switching memristors based on two-dimensional materials.

Autor: Teja Nibhanupudi SS; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA. subrahmanya_teja@utexas.edu., Roy A; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA. royanupam@bitmesra.ac.in.; Birla Institute of Technology, Mesra, Ranchi, 835215, India. royanupam@bitmesra.ac.in., Veksler D; HRL Laboratories, Malibu, CA, 90265, USA., Coupin M; Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA., Matthews KC; Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA., Disiena M; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA., Ansh; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA., Singh JV; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA., Gearba-Dolocan IR; Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA., Warner J; Texas Materials Institute, The University of Texas at Austin, Austin, TX, 78712, USA., Kulkarni JP; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA., Bersuker G; M2D solutions, Austin, TX, 78758, USA., Banerjee SK; Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA. banerjee@ece.utexas.edu.

Publikováno v: Nature communications [Nat Commun] 2024 Mar 14; Vol. 15 (1), pp. 2334. Date of Electronic Publication: 2024 Mar 14.