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pro vyhledávání: '"Berry, David W."'
Autor:
Berry, David W.
This research developed a double-side power electronics packaging scheme for high temperature applications exemplified by 1200 V, 150 A silicon devices. The power modules, based on both quarter and half-bridge topologies, were assembled using sintere
Externí odkaz:
http://hdl.handle.net/10919/64898
Publikováno v:
In Behavioural Brain Research 1983 9(2):181-199
