Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Bernhard Schwartz"'
Autor:
Hartmut Uebensee, Manfred Reiche, Hans Kosina, Xuemei Xu, Hartmut S. Leipner, Geert Brokmann, Bernhard Schwartz, Anna Reinhardt, Thomas Ortlepp
Publikováno v:
AIP Advances, Vol 14, Iss 1, Pp 015165-015165-8 (2024)
Different electrical and thermoelectric properties of a Si-based thermoelectric generator (TEG) are described based on the Kubo–Greenwood formalism. Temperature and doping dependence, phonon scattering (acoustic and optical phonons), and scattering
Externí odkaz:
https://doaj.org/article/82cb0cac920c433a9874b991ae1db596
Autor:
Bernhard Schwartz, Jay M. Kapellusch, Andreas Schrempf, Kathrin Probst, Michael Haller, Arnold Baca
Publikováno v:
BMC Public Health, Vol 16, Iss 1, Pp 1-10 (2016)
Abstract Background Prolonged sitting is ubiquitous in modern society and linked to several diseases. Height-adjustable desks are being used to decrease worksite based sitting time (ST). Single-desk sit-to-stand workplaces exhibit small ST reduction
Externí odkaz:
https://doaj.org/article/1dc95dc9e18b4a0eb063ff33e37e9fe2
Autor:
Peter Hoppe, Harald Reibnegger, Emmerich Boxhofer, Astrid Leeb, Iris Frenner, Bernhard Schwartz
Musculoskeletal disorders (MSDs) are the main cause of pain leading to high economic burden and psychosocial disadvantages. In addition, psychological stress impacts the overall health as well as the quality of life. Elementary school teachers clearl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a2177002e58f5f5debd974a8af047f5a
https://phaidra.univie.ac.at/o:1645619
https://phaidra.univie.ac.at/o:1645619
Effect of alternating postures on cognitive performance for healthy people performing sedentary work
Autor:
Arnold Baca, Jay Kapellusch, Kathrin Probst, Bernhard Schwartz, Andreas Schrempf, Michael J. Haller
Publikováno v:
Ergonomics. 61:778-795
Prolonged sitting is a risk factor for several diseases and the prevalence of worksite-based interventions such as sit-to-stand workstations is increasing. Although their impact on sedentary behaviour has been regularly investigated, the effect of wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0e2571f7993677dee2f6a1ff4173cd7
https://doi.org/10.1080/00140139.2017.1417642
https://doi.org/10.1080/00140139.2017.1417642
Publikováno v:
Ergonomics. 62(6)
Implementing sit/stand workstations in sedentary work environments is a common way to reduce sedentary time, but their medium-term effect on cognitive performance is unclear. To address this circumstance, eighteen office workers participated in a two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2567299d90d7b90ce8cc1d845fa48ddd
https://pubmed.ncbi.nlm.nih.gov/30762479
https://pubmed.ncbi.nlm.nih.gov/30762479
Publikováno v:
Materials today: Proceedings
For mono-crystalline Ge the indirect luminescence intensity declines upon growing temperature from 80 to 300 K, whereas for dislocated Ge structures the opposite behavior occurs. These findings are comparable to earlier observations on Si. The drop o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d2b5b9eea75d9ebdc7785124401527bb
https://hdl.handle.net/21.11116/0000-0009-2E85-E21.11116/0000-0009-2E83-0
https://hdl.handle.net/21.11116/0000-0009-2E85-E21.11116/0000-0009-2E83-0
Autor:
Bernhard Schwartz, Michael Oehme, Joerg Schulze, Konrad Kostecki, Tzanimir Arguirov, P. Saring, Martin Kittler, Erich Kasper
Publikováno v:
Solid State Phenomena. 242:361-367
We analyzed multi quantum well light emitting diodes, consisting of ten alternating GeSn/Ge-layers, were grown by molecular beam epitaxy on Si. The Ge barriers were 10 nm thick and the GeSn wells were grown with 7% Sn and thicknesses between 6 and 12
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3441ecf02855ba9c16079fe8a99811b3
https://doi.org/10.4028/www.scientific.net/ssp.242.361
https://doi.org/10.4028/www.scientific.net/ssp.242.361
Publikováno v:
Silicon Photonics XII.
To enlarge the tensile strain in Ge light emission diodes (s-Ge LED) we applied a GeSn virtual substrate (VS) on Si (001) with a Sn content of 4.5 %, to produce s-Ge LEDs. The LED stack was grown by molecular beam epitaxy. Electroluminescence investi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::486fae49208fccd264b209d558387711
https://doi.org/10.1117/12.2249564
https://doi.org/10.1117/12.2249564
Publikováno v:
physica status solidi c. 11:1686-1691
Antimony-doped Ge-LEDs were subjected to electroluminescence studies at temperatures about 300 K and 80 K. The LEDs were grown on Si substrates by MBE. The thickness of the active layer was 300 nm. For the p+nn+-LEDs the Sb concentrations were 1 × 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0a01edfc79805ba75643b44a6958e97
https://doi.org/10.1002/pssc.201400056
https://doi.org/10.1002/pssc.201400056
Autor:
R. Koerner, David Weisshaupt, Weidong Zhang, Michal Kern, Erlend Rolseth, Bernhard Schwartz, Lion Augel, Michael Oehme, L Haenel, Jörg Schulze, Inga A. Fischer, Stefan Bechler, D Schwaiz
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We report on the first experimental demonstration of a monolithic integrated Group-IV Ge semiconductor optical amplifier (SOA) — the Ge Zener-Emitter (ZE). The ZE is a device featuring light amplification up to 4.7 dB (92 mA) at center wavelength o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b6a012b2e9258c3e2de129fef85bf68
https://doi.org/10.1109/iedm.2016.7838474
https://doi.org/10.1109/iedm.2016.7838474