Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Bernhard Rebhan"'
Autor:
Bernhard Rebhan, Viorel Dragoi, Thomas Plach, Christoph Flötgen, Kurt Hingerl, Markus Wimplinger, Nasser Razek
Publikováno v:
Surface and Interface Science. :57-137
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2d8aac92c67f7ad57b3396e6f10e28
https://doi.org/10.1002/9783527822492.ch62
https://doi.org/10.1002/9783527822492.ch62
Autor:
Thomas Wagenleitner, Markus Wimplinger, Bernhard Rebhan, Thomas Plach, Paul Lindner, Viorel Dragoi
Publikováno v:
ECS Transactions. 86:145-158
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcc4ebff2be6beac87243059a6b248f8
https://doi.org/10.1149/08605.0145ecst
https://doi.org/10.1149/08605.0145ecst
Publikováno v:
Microsystem Technologies. 24:815-822
The influence of wafer bonding and post-bond annealing conditions on the (cavity) void size and distribution was investigated theoretically and verified experimentally. Based on Cu–Cu thermo-compression bonding at 175 °C for 30 min and subsequent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d46d4ab0b7ea3a9f605efb194d5c8ba3
https://doi.org/10.1007/s00542-017-3523-5
https://doi.org/10.1007/s00542-017-3523-5
Autor:
Mehmet Kaynak, Helmut Kurz, Peter Kerepesi, Sebastian Schulze, Matthias Wietstruck, Mirko Fraschke, Bernhard Rebhan
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
The main challenges for Al-Al wafer bonding are the fast oxidation and the high roughness of the Al surface. This paper describes an optimized Al sputter-deposition process reducing the surface roughness to values below 2 nm. Based on this, a wafer l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0261d113761c4fcbe412ed6175b2b91
https://doi.org/10.1109/ectc.2019.00040
https://doi.org/10.1109/ectc.2019.00040
Autor:
Matthias Wietstruck, Selin Tolunay Wipf, Mehmet Kaynak, Josef Meiler, Peter Kerepesi, C. Wipf, Bernhard Rebhan, Gerald Silberer, Helmut Kurz, Sebastian Schulze
Publikováno v:
2019 IEEE 69th Electronic Components and Technology Conference (ECTC).
In this work, we demonstrate an Al-Al direct bonding process for advanced wafer-level packaging and heterogeneous integration. The wafer bonding process is performed at 300°C with an alignment accuracy of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0cab508acec36419107130fb35126495
https://doi.org/10.1109/ectc.2019.00147
https://doi.org/10.1109/ectc.2019.00147
Autor:
Kurt Hingerl, Nishant Malik, Kari Schjølberg-Henriksen, Viorel Dragoi, Bernhard Rebhan, Andreas Hinterreiter
Publikováno v:
ECS Transactions
Thermo-compression wafer bonding is a key technology for the wafer-level production of hermetically sealed cavities, which are essential for the functioning of many microelectromechanical systems (MEMS). Aluminum, with its low material price, high th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c54d78f463a875cc6da63e32e430782
https://doi.org/10.1149/07509.0015ecst
https://doi.org/10.1149/07509.0015ecst
Publikováno v:
Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT). 2016:000488-000541
High volume aligned wafer bonding processes typically separate the wafer to wafer alignment process from the wafer bonding process and this wafer to wafer alignment is normally done in an ambient atmosphere. While this process flow has worked well an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9942875e8d3702f1f74afb2bf39a08c7
https://doi.org/10.4071/2016dpc-ta33
https://doi.org/10.4071/2016dpc-ta33
Publikováno v:
ECS Meeting Abstracts. :1624-1624
Large diameter, dislocation-free Ge single crystalline wafers are relatively new in the semiconductors industry. In the past a few groups reported on the use of 200 mm Ge wafers for manufacturing of germanium-on-insulator (GeOI) substrates [1-3], wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c243ecdd067a43f9a88eaa0ccb79df7
https://doi.org/10.1149/ma2020-02221624mtgabs
https://doi.org/10.1149/ma2020-02221624mtgabs
Publikováno v:
ECS Meeting Abstracts. :1651-1651
The development of various low temperature wafer bonding methods in early 2000’s marked an important milestone for the direct wafer bonding applications. Wafer bonding was adopted in the microelectronics fabs as the use of plasma activated wafer bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::675b9bc585074fca6fcffa03bd5b91bf
https://doi.org/10.1149/ma2020-02221651mtgabs
https://doi.org/10.1149/ma2020-02221651mtgabs
Aluminum–aluminum wafer bonding is becoming increasingly important in the production of CMOS microelectromechanical systems. So far, successful bonding has required extreme processing temperatures of 450 °C or more, because the chemically highly s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::502c2502e4a02ca0f7a00e6d8651f9d5
https://epub.jku.at/doi/10.1007/s00542-017-3520-8
https://epub.jku.at/doi/10.1007/s00542-017-3520-8
