Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Bernhard R. Liegl"'
Autor:
Brian C. Sapp, Kia S. Low, Nelson Felix, Ian Stobert, Chandrasekhar Sarma, Bernhard R. Liegl, Stephen E. Greco, Timothy A. Brunner, Kourosh Nafisi
Publikováno v:
SPIE Proceedings.
The ever shrinking lithography process window requires us to maximize our process window and minimize tool-induced process variation, and also to quantify the disturbances to an imaging process caused upstream of the imaging step. Relevant factors in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::359e382cbe812e16465f2ac928655472
https://doi.org/10.1117/12.846768
https://doi.org/10.1117/12.846768
Publikováno v:
SPIE Proceedings.
More sophisticated corrections of overlay error are required because of the challenge caused by technology scaling faster than fundamental tool improvements. Starting at the 45 nm node, the gap between the matchedmachine- overlay error (MMO) and tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1dc26944611eb4b1ce5fbb040ec25118
https://doi.org/10.1117/12.849225
https://doi.org/10.1117/12.849225
Autor:
Colin J. Brodsky, Gerhard Lembach, Scott M. Mansfield, Andrew Brendler, Timothy J. Wiltshire, Bernhard R. Liegl, Wai-kin Li, Allen H. Gabor, Timothy A. Brunner, Shailendra Mishra, Vinayan C. Menon
Publikováno v:
Optical Microlithography XXI.
Depth of Focus (DOF) and exposure latitude requirements have long been ambiguous. Techniques range from scaling values from previous generations to summing individual components from the scanner. Even more ambiguous is what critical dimension (CD) va
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995ce8e57cee13af9035b3790ef9a65d
https://doi.org/10.1117/12.773070
https://doi.org/10.1117/12.773070
Publikováno v:
Optical Microlithography XXI.
As the Rayleigh equations already tell us, improvements in imaging resolution often come at the price of a depth-offocus loss. Often we balance the resolution versus DoF dilemma without regard of the imaging layers location in the overall film stack.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7974ef8eb400cf7fb39d1626202c5e0
https://doi.org/10.1117/12.773382
https://doi.org/10.1117/12.773382
Autor:
Stephen E. Greco, Timothy A. Brunner, Kourosh Nafisi, Ian Stobert, Bernhard R. Liegl, Nelson Felix, Chandrasekhar Sarma, Brian C. Sapp
Publikováno v:
Journal of Micro/Nanolithography, MEMS, and MOEMS. 9:041311
The ever-shrinking lithography process window dictates that we maximize our process window, minimize process variation, and quantify the disturbances to an imaging process caused upstream of the imaging step. Relevant factors include across-wafer and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01203bbbc0d8b1f633c8db6b9a33de89
https://doi.org/10.1117/1.3530580
https://doi.org/10.1117/1.3530580