Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Bernhard Michl"'
Autor:
Martin C. Schubert, Stefan W. Glunz, Patricia Krenckel, Ralph Müller, Bernhard Michl, Jan Benick, Florian Schindler, Armin Richter, Stephan Riepe
Publikováno v:
Solar Energy Materials and Solar Cells. 171:180-186
Multicrystalline (mc) n-type silicon has proven to be a suitable substrate for the fabrication of highly efficient mc-Si solar cells. In this paper, we elaborate the impact of base material parameters on the efficiency potential of n-type mc-Si solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e79ae50db911e1a12ee6ef6b13ff6dbe
https://doi.org/10.1016/j.solmat.2017.06.005
https://doi.org/10.1016/j.solmat.2017.06.005
Autor:
Armin Richter, Stefan W. Glunz, Patricia Krenckel, Florian Schindler, Ralph Müller, Jan Benick, Martin C. Schubert, Stephan Riepe, Bernhard Michl
Publikováno v:
Energy Procedia. 124:777-780
In this contribution, we demonstrate a route for efficiencies exceeding 22% with n-type multicrystalline (mc) silicon solar cells based on the TOPCon cell concept featuring a boron-diffused front side emitter and a full-area passivating rear contact.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7f172c161a3b4f1f2005248401d1239
https://doi.org/10.1016/j.egypro.2017.09.086
https://doi.org/10.1016/j.egypro.2017.09.086
Autor:
Florian Schindler, Stephan Riepe, Martin C. Schubert, Jonas Schön, Patricia Krenckel, Bernhard Michl, Johannes Giesecke, Wilhelm Warta
Publikováno v:
Progress in Photovoltaics: Research and Applications. 25:499-508
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b0e1ede049d15df6651d21aa1751dfb
https://doi.org/10.1002/pip.2836
https://doi.org/10.1002/pip.2836
Autor:
Martin C. Schubert, Jonas Schön, Martin Hermle, Bernhard Michl, Stefan W. Glunz, Frank Feldmann, Florian Schindler, Stephan Riepe, Jan Benick, Wilhelm Warta, Patricia Krenckel
Publikováno v:
IEEE Journal of Photovoltaics. 5:1571-1579
In this study, we demonstrate the potential of multicrystalline (mc) n-type silicon for the fabrication of highly efficient mc-Si solar cells. High-quality mc n-type silicon wafers are obtained from a research ingot crystallized in a high-purity cruc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efbc8de7d06e6be06051131ee32cda46
https://doi.org/10.1109/jphotov.2015.2466474
https://doi.org/10.1109/jphotov.2015.2466474
Autor:
Wilhelm Warta, Andreas Fell, Nikolaus Hagedorn, Bernhard Michl, Martin Kasemann, Milan Padilla, Roman Keding, Martin C. Schubert, Christian Reichel
Publikováno v:
Progress in Photovoltaics: Research and Applications. 24:326-339
Highest efficiency solar cells in industrial and R&D environments are increasingly sensitive to local performance limiting processing faults, which are best characterised by spatially resolved characterisation techniques. This work contains a discuss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::44b13fb421d004c11f1f1d60114a40a2
https://doi.org/10.1002/pip.2701
https://doi.org/10.1002/pip.2701
Autor:
Jan Benick, Jochen Hohl-Ebinger, Wilhelm Warta, Laura E. Mundt, Bernhard Michl, Johannes Giesecke, Atsushi Ogura, Milan Padilla, Martin C. Schubert, Michio Tajima
Publikováno v:
Solar Energy Materials and Solar Cells. 138:96-101
Iron is an omnipresent and efficiency-limiting impurity in p-type silicon solar cells. A very useful technique to detect the interstitial iron concentration in boron doped silicon is based on carrier lifetime measurements at two metastable states of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81176b51c36d634943affd1444a0d430
https://doi.org/10.1016/j.solmat.2015.03.001
https://doi.org/10.1016/j.solmat.2015.03.001
Autor:
Wilhelm Warta, Andreas Fell, Milan Padilla, Bernhard Michl, Martin C. Schubert, Martin Kasemann, Nikolaus Hagedorn, Christian Reichel, Sven Kluska
Publikováno v:
IEEE Journal of Photovoltaics. 5:752-758
Next-generation highest efficiency silicon solar cells are often designed with elaborate doping and contacting structures that are sensitive to series-resistance-induced losses. Such structures exhibit complex asymmetric current paths, which present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0fba2e5e64320809bfcf97576511b5e
https://doi.org/10.1109/jphotov.2015.2397595
https://doi.org/10.1109/jphotov.2015.2397595
Autor:
Martin C. Schubert, Bettina Grobschadl, Christine Prietl, Wolfgang Waldhauser, Gerhard Peharz, Bernhard Michl
Publikováno v:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC).
Recently an approach was published which describes the color tuning of crystalline Silicon (c-Si) solar cells based on plasmonic coatings. In the current work the influence of the plasmonic coating (Ag nano-particles) on the performance of the solar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183a806d89155fc8c8bedeb2a4cc7030
https://doi.org/10.1109/pvsc.2017.8366629
https://doi.org/10.1109/pvsc.2017.8366629
Autor:
Ino Geisemeyer, Florian Schindler, Wilhelm Warta, Bernhard Michl, Milan Padilla, Martin C. Schubert, Stephen T. Haag
Publikováno v:
IEEE Journal of Photovoltaics. 4:1502-1510
We present an overview of imaging techniques for analyzing different loss mechanisms in solar cells. The bulk and surface recombination, optical, series resistance, and shunt losses are investigated in more detail. It is shown that a detailed spatial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::495151c1ccb56abb1d9c43ff016d4391
https://doi.org/10.1109/jphotov.2014.2358795
https://doi.org/10.1109/jphotov.2014.2358795
Autor:
Nico Wöhrle, Hasan Al-Mohtaseb, Hannes Höffler, Jonas Haunschild, Bernhard Michl, Martin Kasemann
Publikováno v:
Energy Procedia. 55:85-93
For the extraction of spatially resolved solar cell parameters, a variety of methods has been introduced in the past years. Nearly all methods use the fact that the local luminescence intensity can be calibrated to local junction voltage. The differe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69ad0ba12f470dde186d87516ee7c9a6