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pro vyhledávání: '"Bernhard Loeffler"'
Autor:
Bernhard Loeffler, Andrea Kraxner, Martin Faccinelli, Peter Hadley, Evelin Fisslthaler, Frederic Roger, Rainer Minixhofer
Publikováno v:
IEEE Transactions on Electron Devices. 63:4395-4401
A 3-D electron-beam-induced current (EBIC) model was implemented in technology computer aided design simulations. The model uses a carefully designed charge carrier generation profile that describes how an electron beam induces charge carriers in a s
Seit Beginn des kapitalistischen Wirtschaftens wird nach einer ethisch-religiösen Begründung des liberalen Marktgeschehens gesucht. Mit dem Siegeszug des Neoliberalismus nach 1989/90, seinen Krisensymptomen der letzten Jahre sowie der Revitalisieru
Autor:
Bernhard Loeffler, Peter Hadley, M. Faccinelli, Rainer Minixhofer, Frederic Roger, A. Kraxner, S. Kirnstoetter
Publikováno v:
SPIE Proceedings.
In this work the characterization of CMOS diodes with Electron Beam Induced Current (EBIC) measurements in a Scanning Electron Microscope (SEM) are presented. Three-dimensional Technology Computer Aided Design (TCAD) simulations of the EBIC measureme
Autor:
Hubert Enichlmair, Jong Mun Park, Bernhard Loeffler, Rainer Minixhofer, Max G. Levy, Sara Carniello
Publikováno v:
2009 IEEE International Reliability Physics Symposium.
The hot carrier stress induced device degradation of a p-type LDMOS high voltage transistor is investigated at different stress conditions. The influence of shallow trench corner rounding and carbon ion implantation into the shallow trench region is