Zobrazeno 1 - 10
of 175
pro vyhledávání: '"Bernhard, Urbaszek"'
Autor:
Shun Feng, Aidan J. Campbell, Mauro Brotons-Gisbert, Daniel Andres-Penares, Hyeonjun Baek, Takashi Taniguchi, Kenji Watanabe, Bernhard Urbaszek, Iann C. Gerber, Brian D. Gerardot
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-10 (2024)
Abstract The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb-bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacki
Externí odkaz:
https://doaj.org/article/4d63b3da13984c6387ee85cb6c9bfb56
Autor:
Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos, Pierre Renucci, Delphine Lagarde, Xavier Marie, Bernhard Urbaszek, Ziyang Gan, Antony George, Kenji Watanabe, Takashi Taniguchi, Andrey Turchanin, Laurent Lombez, Nicolas Combe, Vincent Paillard, Jean-Marie Poumirol
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Transition Metal Dichalcogenides (TMD-ML) with extremely robust a
Externí odkaz:
https://doaj.org/article/17306a5e49b24e849afd6641f296f158
Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Autor:
Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha, Jean-Marie Poumirol, Aurelien Cuche, Gonzague Agez, Delphine Lagarde, Xavier Marie, Vincent Larrey, Jonas Müller, Guilhem Larrieu, Vincent Paillard, Bernhard Urbaszek
Publikováno v:
Communications Physics, Vol 6, Iss 1, Pp 1-7 (2023)
Abstract Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on complementary metal–oxide–semiconductor (CMOS) compatible nanofabrication. Optically active materials
Externí odkaz:
https://doaj.org/article/3315575af4854056b79ed60f3f8c313a
Autor:
Roberto Rosati, Ioannis Paradisanos, Libai Huang, Ziyang Gan, Antony George, Kenji Watanabe, Takashi Taniguchi, Laurent Lombez, Pierre Renucci, Andrey Turchanin, Bernhard Urbaszek, Ermin Malic
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-9 (2023)
Abstract The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still ha
Externí odkaz:
https://doaj.org/article/f8678d09fc7945e0b91db15e93e191de
Autor:
Dorian Beret, Ioannis Paradisanos, Hassan Lamsaadi, Ziyang Gan, Emad Najafidehaghani, Antony George, Tibor Lehnert, Johannes Biskupek, Ute Kaiser, Shivangi Shree, Ana Estrada-Real, Delphine Lagarde, Xavier Marie, Pierre Renucci, Kenji Watanabe, Takashi Taniguchi, Sébastien Weber, Vincent Paillard, Laurent Lombez, Jean-Marie Poumirol, Andrey Turchanin, Bernhard Urbaszek
Publikováno v:
npj 2D Materials and Applications, Vol 6, Iss 1, Pp 1-8 (2022)
Abstract Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures. Critical for carrier and exciton transport is the material quality and the nature of the lateral heterojunction. Important detai
Externí odkaz:
https://doaj.org/article/f524217039f14851abe8a9b00da35f0c
Autor:
Ryan J. Gelly, Dylan Renaud, Xing Liao, Benjamin Pingault, Stefan Bogdanovic, Giovanni Scuri, Kenji Watanabe, Takashi Taniguchi, Bernhard Urbaszek, Hongkun Park, Marko Lončar
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-7 (2022)
Here, the authors use a tapered optical fibre to create a dynamic, reversible strain in a suspended WSe2 monolayer, and observe that dark excitons are funnelled to high-strain regions and are the principal participants in drift and diffusion at cryog
Externí odkaz:
https://doaj.org/article/26e797ea54f84256bbe48453986bffaa
Autor:
Shivangi Shree, Delphine Lagarde, Laurent Lombez, Cedric Robert, Andrea Balocchi, Kenji Watanabe, Takashi Taniguchi, Xavier Marie, Iann C. Gerber, Mikhail M. Glazov, Leonid E. Golub, Bernhard Urbaszek, Ioannis Paradisanos
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Efficient second-harmonic generation (SHG) occurs for crystals with broken inversion symmetry, such as transition metal dichalcogenide monolayers. Here the authors show SHG tuning in bilayer MoS2 - an inversion-symmetric crystal - mediated by interla
Externí odkaz:
https://doaj.org/article/bdfdd0c7d1d0456180d76b5aff517245
Autor:
Cedric Robert, Sangjun Park, Fabian Cadiz, Laurent Lombez, Lei Ren, Hans Tornatzky, Alistair Rowe, Daniel Paget, Fausto Sirotti, Min Yang, Dinh Van Tuan, Takashi Taniguchi, Bernhard Urbaszek, Kenji Watanabe, Thierry Amand, Hanan Dery, Xavier Marie
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
Optical excitation of transition metal dichalcogenide monolayers mostly generates excitons species with inherently short lifetime and spin/valley relaxation time. Here, the authors demonstrate efficient spin/valley optical pumping of resident electro
Externí odkaz:
https://doaj.org/article/35d56520ea074ebbbde9036a4f07a084
Autor:
Ioannis Paradisanos, Gang Wang, Evgeny M. Alexeev, Alisson R. Cadore, Xavier Marie, Andrea C. Ferrari, Mikhail M. Glazov, Bernhard Urbaszek
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-7 (2021)
The primary stages of carrier relaxation in atomically thin transition metal dichalcogenides are hardly accessible due to their fast timescales. Here, the authors measure the first stages of carrier–phonon interaction in monolayer WSe2 via a series
Externí odkaz:
https://doaj.org/article/bd25958c760e4316a5cc3edfd9b80af8
Autor:
Ioannis Paradisanos, Shivangi Shree, Antony George, Nadine Leisgang, Cedric Robert, Kenji Watanabe, Takashi Taniguchi, Richard J. Warburton, Andrey Turchanin, Xavier Marie, Iann C. Gerber, Bernhard Urbaszek
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
The authors investigate the interplay between the stacking order and the interlayer coupling in MoS2 homobilayers as well as artificially stacked bilayers grown by chemical vapour deposition, and identify the interlayer exciton absorption and A-B exc
Externí odkaz:
https://doaj.org/article/3a9f151ebbc14e63900ca397966936ba