Zobrazeno 1 - 10
of 322
pro vyhledávání: '"Bernd Tillack"'
Autor:
Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, Seiichi Miyazaki
Publikováno v:
Nanomaterials, Vol 13, Iss 9, p 1475 (2023)
We have demonstrated the high–density formation of super–atom–like Si quantum dots with Ge–core on ultrathin SiO2 with control of high–selective chemical–vapor deposition and applied them to an active layer of light–emitting diodes (LED
Externí odkaz:
https://doaj.org/article/173deb18e5534768aa9276dd2497a6a0
Publikováno v:
ECS Transactions. 109:205-215
Heteroepitaxial growth of Ge on Si has great interest for various optoelectronic applications such as Ge photodiodes(1). However 4.2% of lattice mismatch causes dislocation formation and island growth. High quality Ge(001) growth techniques are repor
Publikováno v:
ECS Transactions. 109:343-350
Multilayered Ge nanodots have drawn much attention due to their potential applications in optoelectronics, such as photodetectors and lasers. Many groups studied multilayered Ge nanodots with Si spacers on Si(001) grown by Stranski-Krastanov (SK) gro
Autor:
Ketan Anand, Markus Andreas Schubert, Agnieszka Anna Corley-Wiciak, Davide Spirito, Cedric Corley-Wiciak, Wolfgang Matthias Klesse, Andreas Mai, Bernd Tillack, Yuji Yamamoto
Publikováno v:
ECS Transactions. 109:269-275
Dislocation free local SiGe-on-insulator virtual substrate is fabricated using lateral selective SiGe growth by reduced pressure chemical vapor deposition. The lateral selective SiGe growth is performed around ~1.25 µm square Si (001) pillar in a ca
Autor:
Christian Hoyer, Luca Steinweg, Zhibo Cao, Vincent Ries, Lei Li, Florian Protze, Corrado Carta, Jens Wagner, Mehmet Kaynak, Bernd Tillack, Frank Ellinger
Publikováno v:
IEEE Journal on Flexible Electronics. 1:122-133
Autor:
Zhibo Cao, Alexander Goritz, Matteo Stocchi, Matthias Wietstruck, Christian Hoyer, Luca David Steinweg, Corrado Carta, Frank Ellinger, Bernd Tillack, Mehmet Kaynak
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 35:2-10
Heteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because of the possibility for strain, band gap/Fermi-level engineering, and applying emerging artificial materials such as a sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ed7aeb0f28d7cb82d316b1e274eac40
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055001
Three-dimensional (3D) self-ordered Ge nanodots in cyclic epitaxial growth of Ge/SiGe superlattice on Si0.4Ge0.6 virtual substrate (VS) were fabricated by reduced pressure chemical vapor deposition. The Ge nanodots were formed by Stranski-Krastanov m
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1057
Self-ordered multilayered Ge nanodots with SiGe spacers on a Si0.4Ge0.6 virtual substrate are fabricated using reduced-pressure chemical vapor deposition, and the mechanism of vertical ordering is investigated. The process conditions of Ge and SiGe l
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:023014
A method for high quality epitaxial growth of Ge on Si (111) and Si (110) is investigated by reduced pressure chemical vapor deposition. Two step Ge epitaxy (low temperature Ge seed and high temperature main Ge growth) with several cycles of annealin