Zobrazeno 1 - 10
of 71
pro vyhledávání: '"Bernd Schineller"'
Autor:
Gianluca Timò, Marco Calicchio, Giovanni Abagnale, Nicola Armani, Elisabetta Achilli, Marina Cornelli, Filippo Annoni, Bernd Schineller, Lucio Claudio Andreani
Publikováno v:
Materials, Vol 14, Iss 5, p 1066 (2021)
We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the gro
Externí odkaz:
https://doaj.org/article/d3e79f17d6844acea86a70a100ec12e6
Autor:
Johan Dekoster, G. Winderickx, Ngoc Duy Nguyen, Matty Caymax, Barry O'Neil, Johannes Lindner, Maarten Leys, Roger Loo, Bernd Schineller, Stefan Degroote, Michael Heuken, Francesco Buttitta, Kevin Lismont, Olivier Feron, Frank Schulte, Niamh Waldron, Guy Brammertz, Marc Meuris, Gang Wang
Publikováno v:
ECS Transactions. 33:933-939
We have deposited III-V alloys on 200 mm Si miscut wafers with an oxide pattern. The selective epitaxial growth (SEG) of GaAs in large windows defined by SiO2 lines on a thick strained-relaxed Ge buffer layer served as a test vehicle which allowed us
Autor:
P. Lehnen, Ziaul Karim, Johannes Lindner, Brian Lu, Yoshi Senzaki, Bernd Schineller, Peter K. Baumann, U. Weber, Michael Heuken
Publikováno v:
ECS Transactions. 28:137-144
Multi component films for a range of device applications were deposited by atomic vapor deposition (AVD®). Dysprosium doped HfO2 was studied as a high-k material. All HfDyOx films showed a tegragonal/cubic phase. A Dy concentration of 4% was determi
Publikováno v:
ECS Transactions. 28:233-236
The compound semiconductor industry has seen tremen-dous progress in applications ranging from high-power electronics to optoelectronics. However, most of the de-vices being produced today are discrete due to the com-paratively high cost of wafer are
Autor:
G. P. Yablonskii, Y. Dikme, Holger Kalisch, Rolf H. Jansen, V. N. Pavlovskii, Michael Heuken, Andrei Andryieuski, Bernd Schineller, A. V. Danilchyk, Evgenii V. Lutsenko, A. L. Gurskii, N. P. Tarasuk
Publikováno v:
physica status solidi c. 5:2263-2266
Optical and laser properties of a series of MQW heterostructures with varying geometry grown on silicon with Al predeposition were investigated. Photoluminescence (PL) band positions covered a spectral range of 430 – 460 nm under Iexc=1 MW/cm2 and
Autor:
G. P. Yablonskii, Michael Heuken, Rolf H. Jansen, L. Rahimzadeh Khoshroo, V. N. Pavlovskii, Evgenii V. Lutsenko, Y. Dikme, N. P. Tarasuk, Bernd Schineller, A. V. Danilchyk, A. L. Gurskii, Holger Kalisch
Publikováno v:
Superlattices and Microstructures. 41:400-406
Chemical etching and removal of the silicon substrate was used for the creation of optically pumped lift-off InGaN/GaN multiple quantum well (MQW) lasers from heterostructures grown on silicon substrate by MOVPE. Luminescence and laser properties of
Autor:
Tadas Malinauskas, Kęstutis Jarašiūnas, G. P. Yablonskii, A. L. Gurskii, E. V. Lutsenko, Bernd Schineller, V. N. Pavlovskii, Michael Heuken
Publikováno v:
physica status solidi c. 3:1935-1939
Two optical techniques for the determination of a bipolar diffusion length LD of optically excited carriers in GaN epitaxial layers, namely a time-resolved picosecond four-wave mixing (FWM) on free carrier grating and time-integrated photoluminescenc
Autor:
N. V. Rzheutskii, Y. Dikme, Holger Kalisch, Karolis Kazlauskas, Rolf H. Jansen, Bernd Schineller, Evgenii V. Lutsenko, Kestutis Jarasiunas, Saulius Miasojedovas, K. A. Osipov, G. P. Yablonskii, V. N. Pavlovskii, A. L. Gurskii, Arturas Zukauskas, Michael Heuken, A. V. Danilchyk, Tadas Malinauskas, Vitaly Z. Zubialevich, Saulius Jursenas
Publikováno v:
physica status solidi (a). 203:1759-1763
Optical properties and carrier dynamics were investigated in a set of samples grown on Si utilizing different layer combinations between the topmost GaN layer and the Si substrate, including AIN/GaN distributed Bragg reflector (DBR) superlattices as
Autor:
Kęstutis Jarašiūnas, Rolf H. Jansen, G. P. Yablonskii, Y. Dikme, Vitaly Z. Zubialevich, Bernd Schineller, E. V. Lutsenko, Ramūnas Aleksiejūnas, A. L. Gurskii, Bruce Faure, Holger Kalisch, V. N. Pavlovskii, Fabrice Letertre, Michael Heuken, A. Alam
Publikováno v:
physica status solidi (c). 2:2724-2727
Carrier dynamics in highly excited GaN/Si heterostructures have been investigated by means of time-resolved picosecond four-wave mixing (FWM), carrier lifetimes at high excitation energy densities being about 50-150 ps were estimated. The excitation
Autor:
A. Szymakowski, Michael Heuken, A. Alam, G. P. Yablonskii, E. V. Lutsenko, Holger Kalisch, A.I. Stognij, T. S. Shul'ga, Bernd Schineller, Vitaly Z. Zubialevich, A. L. Gurskii, V. N. Pavlovskii, Rolf H. Jansen
Publikováno v:
Journal of Crystal Growth. 275:e1733-e1738
The carrier ambipolar diffusion length L of optically excited carriers in GaN epitaxial layers grown on sapphire substrate was estimated by an optical method using fitting of the experimental photoluminescence spectra recorded from the front and back