Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Bernd Schauwecker"'
Publikováno v:
2021 44th International Spring Seminar on Electronics Technology (ISSE).
In current industrial electronics manufacturing, miniaturized devices and a variety of different device package shapes on one printed circuit board (PCB) are a particular challenge. In this paper, the highly miniaturized 01005 and Land Grid Array (LG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea5f9605876270bcc368ea71378ee8b2
https://doi.org/10.1109/isse51996.2021.9467586
https://doi.org/10.1109/isse51996.2021.9467586
Autor:
Bernd Schauwecker, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Jörg Splettstösser, Piero Gamarra
Publikováno v:
Journal of Crystal Growth. 414:232-236
This work reports on the optimisation of carbon doping GaN buffer layer (BL) for AlGaN/GaN HEMT (high electron mobility transistor) structures, grown by low pressure metal–organic vapour phase epitaxy (LP-MOVPE) on 3 in. SiC semi-insulating substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::803f2fbac82a7d76a44a0388d38c136e
https://doi.org/10.1016/j.jcrysgro.2014.10.025
https://doi.org/10.1016/j.jcrysgro.2014.10.025
Autor:
T. Rodle, Jan Grünenpütt, Bernd Schauwecker, Helmut Jung, Michael Hosch, Peter Abele, Michael Schäfer, Hervé Blanck
Publikováno v:
physica status solidi c. 11:940-944
Output capacitance (Cout) measurements on AlGaN-GaN HEMTs with different field plate (FP) sizes and different EPI configurations as well as different sheet resistances owing to surface preparation have been performed at VDS = 10 and 40 V. A model is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::593dc1d29a106ee6f58fe2893c608322
https://doi.org/10.1002/pssc.201300416
https://doi.org/10.1002/pssc.201300416
Autor:
Carlo De Santi, Stefano, Dalcanale, Antonio, Stocco, Fabiana, Rampazzo, Simone, Gerardin, Matteo, Meneghini, Gaudenzio, Meneghesso, Chini, Alessandro, Verzellesi, Giovanni, Jan, Grünenpütt, Benoit, Lambert, Bernd, Schauwecker, Hervé, Blanck, Zanoni, Andrew Barnes and E.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3674::77437ce9de3bea7d6ed41175f370b1fa
https://hdl.handle.net/11380/1162448
https://hdl.handle.net/11380/1162448
Autor:
Benoit Lambert, Didier Floriot, C. Gourdon, P. Mezenge, J. Bataille, J. Thorpe, F. Bourgeois, Hervé Blanck, Reza Behtash, Helmut Jung, Bernd Schauwecker, C. Ollivier
Publikováno v:
Microelectronics Reliability. 52:2200-2204
UMS have fully qualified the first AlGAN/GaN on SiC HFET technology in Europe for high RF power applications up to C band. Reliability results presented in this paper demonstrate GH50-10 technology reached a high level of maturity. The qualification
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3168cd56b867241160af812a0e314bf7
https://doi.org/10.1016/j.microrel.2012.06.098
https://doi.org/10.1016/j.microrel.2012.06.098
Publikováno v:
Optical Engineering. 41:237
Planar optical waveguide structures in communication network applications require a number of indispensable features, e.g., low insertion loss, efficient fiber-to-chip coupling, polarization independent operation, and high integration density, as wel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b2fb78ded4550bd419ca19a172447fc4
https://doi.org/10.1117/1.1419188
https://doi.org/10.1117/1.1419188