Zobrazeno 1 - 10
of 69
pro vyhledávání: '"Bernd Rheinländer"'
Autor:
Dusan Pudis, Jaroslav Kovac, Jan Jakabovic, Andrej Vincze, Sieler Gottschalch, Gabriele Benndorf, Bernd Rheinländer, Reinhard Schwabe
Publikováno v:
Advances in Electrical and Electronic Engineering, Vol 1, Iss 1, Pp 34-37 (2002)
Our study is focused on the optical and electronic properties of InAs (GaAs) monolayers embedded in Al0.33GA0.67As barrier layers investigated by temperature dependencies of electroluminescence spectra. The experimental results obtained from low temp
Externí odkaz:
https://doaj.org/article/30ce24625e2f46f5afb02b8341d64d7b
Autor:
Annekatrin Hinkel, Marius Grundmann, Helena Hilmer, Bernd Rheinländer, Volker Gottschalch, Martin Lange, Rüdiger Schmidt-Grund, Chris Sturm, Jesús Zúñiga-Pérez
Publikováno v:
physica status solidi (b). 247:1351-1364
Oxide based Bragg reflector (BR) shells were grown con-formally on various curved micro- and nanostructures by means of plasma-enhanced chemical vapor deposition and pulsed laser deposition. The BR shells on circular-cylindrical shaped glass-rods exh
Publikováno v:
Superlattices and Microstructures. 47:19-23
We report on the observation of strong coupling between excitons and cavity photons in a ZnO-based microresonator up to room temperature. The ZnO-based resonator was grown by means of pulsed laser deposition (PLD) on c-sapphire substrate and consists
Autor:
Heidemarie Schmidt, Daniel Fritsch, Mathias Schubert, E. M. Kaidashev, Marius Grundmann, Bernd Rheinländer, Rüdigger Schmidt-Grund, Craig M. Herzinger, Michael Lorenz
Publikováno v:
Journal of the Korean Physical Society. 53:88-93
For ZnO, the optical dielectric functions for polarizations parallel and perpendicular to the optical axis were determined in the photon energy range from 4.0 to 9.5 eV by using generalized spectroscopic ellipsometry and the band structure was calcul
Autor:
Marius Grundmann, Bernd Rheinländer, Carsten Bundesmann, Mathias Schubert, Chris Sturm, Michael Lorenz, Holger Hochmuth, T. Chavdarov, Rüdiger Schmidt-Grund
Publikováno v:
physica status solidi c. 5:1350-1353
The free charge carrier properties at the film-substrate interface of non-polar ZnO films were investigated by generalized infrared spectroscopic ellipsometry in dependence on film thickness and annealing time. For all samples a highly-conductive fil
Autor:
Marius Grundmann, Bernd Rheinländer, Holger Hochmuth, J. Sellmann, Ch. Sturm, Ch. Czekalla, Michael Lorenz, R. Schmidt-Grund, Jörg Lenzner
Publikováno v:
physica status solidi c. 5:1240-1243
ZrO2-Al2O3 Bragg reflectors for future application in ZnO based resonators grown by pulsed laser deposition on c-plane sapphire and silicon substrates show a reflectivity up to 99.8% with a layer pair number of 12.5. Layer thicknesses obtained from s
Autor:
Marius Grundmann, C. Czekalla, Gabriele Benndorf, H. Hochmut, Rüdiger Schmidt-Grund, Bernd Rheinländer, Andreas Rahm, Michael Lorenz
Publikováno v:
Superlattices and Microstructures. 41:360-363
In this paper we report on planar and microscopic cylindrical resonators with ZnO as the cavity and active medium surrounded with ZrO2/MgO Bragg reflectors. We have observed resonator behaviour of these structures and, for the planar resonators, exci
Autor:
Bernd Rheinländer, Marius Grundmann, Thomas Nobis, H. Herrnberger, Volker Gottschalch, Rüdiger Schmidt-Grund
Publikováno v:
Thin Solid Films. 483:257-260
a-Si/SiOx Bragg-reflectors for the wavelength region from 500 nm to 830 nm with a low number of pairs were grown on cylindrical half-pipes on InP substrates using plasma-enhanced chemical vapor deposition with regard to applications for the confineme
Autor:
Ulrich E. Klotz, W A. Jordaan, Deane Chandler-Horowitz, Michael Krumrey, Martin P. Seah, H Y. Chen, Farid Bensebaa, Isao Kojima, Y. Tamminga, H.-U. Danzebrink, Andrew T. S. Wee, Thomas Osipowicz, I Vickridge, Shigeo Tanuma, H Cho, D Muller, S Biswas, Roland Hauert, Elke Wendler, Noboru Suzuki, Nhan V. Nguyen, Marcel A. Verheijen, Yasushi Azuma, Joseph A. Dura, Steve J. Spencer, Paul Bailey, U Falke, Th. Gross, Mineharu Suzuki, Bernd Rheinländer, W Oesterle, Hansuek Lee, James R. Ehrstein, C. van der Marel, Chris Jeynes, D. W. Moon, J S. Pan
Publikováno v:
Surface and Interface Analysis. 36:1269-1303
A study was carried out for the measurement of ultrathin SiO on (100) and (111) orientation silicon wafer in the thickness range 1.5-8 nm. XPS, medium-energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS, elastic backscatte
Autor:
Bernd Rheinländer, M. Schubert, Marius Grundmann, E. M. Kaidashev, Craig M. Herzinger, Michael Lorenz, Heidemarie Schmidt, Daniel Fritsch, Rüdiger Schmidt-Grund
Publikováno v:
Thin Solid Films. :500-504
The ordinary optical dielectric functions of pulsed-laser-deposition grown wurtzite c-plane Mg x Zn 1-x O (0≤x≤0.53) thin films have been determined by using spectroscopic ellipsometry in the photon energy range from 4.5 to 9.5 eV. The dielectric