Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Bernd Leibold"'
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 26:529-541
A unique and novel, 60 μm deep trench and refill process for manufacturing Si-based Super-Junction device structures for high-voltage applications beyond 600 V is discussed on the following pages. We combine an etching-process with a DCS-HCl epitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73dc65351e27f481e831eba3875b9545
https://doi.org/10.1109/tsm.2013.2272042
https://doi.org/10.1109/tsm.2013.2272042
Autor:
Corinna Koepernik, Bernd Leibold, Rainer Plontke, Jason Plumhoff, Peter Voehringer, Joerg Butschke, Emmanuel Rausa, Mathias Irmscher, Dirk Beyer
Publikováno v:
SPIE Proceedings.
The combination of conductive topcoat ESPACER Z300 and positive tone CAR FEP171 was investigated in detail for the second level patterning of Alternating Aperture Phase Shift Masks (AAPSM) using e-beam lithography. Chrome load variations between 2 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205dd8549a4b7a1c02d7d0441108fd74
https://doi.org/10.1117/12.557719
https://doi.org/10.1117/12.557719
Autor:
Corinna Koepernik, Lutz Bettin, Armelle Vix, Bernd Leibold, Joerg Butschke, Dirk Beyer, Mathias Irmscher, Rainer Plontke, Peter Voehringer
Publikováno v:
SPIE Proceedings.
The aim is to apply e-beam lithography for second level imaging of Alternating Phase Shift Masks (altPSM) in the 65 nm node and below. Difficulties due to charging effects arise when exposing areas where the chromium absorber has been cleared away. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc9020e29f120059656fef8fcc4a10d9
https://doi.org/10.1117/12.568033
https://doi.org/10.1117/12.568033
Autor:
Dirk Beyer, Lutz Bettin, Corinna Koepernik, Joerg Butschke, Rainer Plontke, Armelle Vix, Bernd Leibold, Peter Voehringer, Mathias Irmscher
Publikováno v:
SPIE Proceedings.
When e-beam lithography is applied for second level imaging of Alternating Phase Shift Masks charging effects on the cleared chrome absorber induces placement, overlay and pattern distortion of the second layer. The water soluble conductive to coat S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1150e07a2ca43406c63abc5011fd3f6
https://doi.org/10.1117/12.518037
https://doi.org/10.1117/12.518037
Mask patterning using chemically amplified resists and the novel STEAG HamaTech Blank Coater ASR5000
Autor:
Jakob Szekeresch, Peter Dress, Christian Krauss, Reinhard Springer, Mathias Irmscher, Dietmar Mueller, Dirk Beyer, Christian Reuter, Bernd Leibold, Thomas Hoffmann, Peter Voehringer, Peter Hudek, Corinna Koepernik
Publikováno v:
SPIE Proceedings.
The new capillary spin (CAP-Spin) coating principle, realized in the STEAG HamaTech ASR5000, was evaluated for mask making using chemically amplified resists. Basic correlations between coating parameters, resist thickness and film uniformity were fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5f1e79010a31f7615f7d35a675f4f03
https://doi.org/10.1117/12.467424
https://doi.org/10.1117/12.467424
Autor:
Dirk Beyer, Florian Letzkus, Chris Constantine, Corinna Koepernik, Christian Krauss, Reinhard Springer, Mathias Irmscher, Joerg Butschke, Dietmar Mueller, Thomas Hoffmann, Bernd Leibold, Peter Voehringer
Publikováno v:
SPIE Proceedings.
Positive tone chemically amplified resists CAP209, EP012M (TOK), KRS-XE (JSR) and FEP171 (Fuji) were evaluated for mask making. The investigations were performed on an advanced tool set comprising of a Steag coater ASR5000, Steag developer ASP5000, 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d4201d4dbfa335ac01d54573efd90f
https://doi.org/10.1117/12.476944
https://doi.org/10.1117/12.476944
Publikováno v:
Physica C: Superconductivity. :2101-2102
Superconducting YBaCuO thin films are deposited on silicon (100) substrates where an intermediate buffer layer of yttria stablized zirconia [YSZ] is used to prevent interdiffusion and interfacial reactions. Both layers are grown epitaxially
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ba51e926a84a419719509165e39a169
https://doi.org/10.1016/0921-4534(91)91175-4
https://doi.org/10.1016/0921-4534(91)91175-4
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