Zobrazeno 1 - 10
of 152
pro vyhledávání: '"Bernd, Gotsmann"'
Autor:
Lorenzo Rocchino, Alan Molinari, Igor Kladaric, Federico Balduini, Heinz Schmid, Marilyne Sousa, John Bruley, Holt Bui, Bernd Gotsmann, Cezar B. Zota
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-9 (2024)
Abstract The resistivity scaling of Cu electrical interconnects represents a critical challenge in Si CMOS technology. As interconnect dimensions reach below 10 nm, Cu resistivity increases significantly due to surface scattering. Topological materia
Externí odkaz:
https://doaj.org/article/5fabe3bd586a45d7af55d0138d60b9bd
Autor:
Federico Balduini, Alan Molinari, Lorenzo Rocchino, Vicky Hasse, Claudia Felser, Marilyne Sousa, Cezar Zota, Heinz Schmid, Adolfo G. Grushin, Bernd Gotsmann
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract The chiral anomaly - a hallmark of chiral spin-1/2 Weyl fermions - is an imbalance between left- and right-moving particles that underpins phenomena such as particle decay and negative longitudinal magnetoresistance in Weyl semimetals. The d
Externí odkaz:
https://doaj.org/article/05dbb72856724526988bd8b86324bcec
Autor:
Olivier Maher, Roy Bernini, Nele Harnack, Bernd Gotsmann, Marilyne Sousa, Valeria Bragaglia, Siegfried Karg
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-15 (2024)
Abstract With remarkable electrical and optical switching properties induced at low power and near room temperature (68 °C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research com
Externí odkaz:
https://doaj.org/article/2446e7a23d2e4a4dbbf06c4572eb28ae
Autor:
Lorenzo Rocchino, Federico Balduini, Heinz Schmid, Alan Molinari, Mathieu Luisier, Vicky Süß, Claudia Felser, Bernd Gotsmann, Cezar B. Zota
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-8 (2024)
Abstract Semiconductor transistors operate by modulating the charge carrier concentration of a channel material through an electric field coupled by a capacitor. This mechanism is constrained by the fundamental transport physics and material properti
Externí odkaz:
https://doaj.org/article/60bb85e6ade24d93a1bff852c9b626c8
Autor:
Andrea Gemma, Fatemeh Tabatabaei, Ute Drechsler, Anel Zulji, Hervé Dekkiche, Nico Mosso, Thomas Niehaus, Martin R. Bryce, Samy Merabia, Bernd Gotsmann
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-6 (2023)
Abstract Molecules are predicted to be chemically tunable towards high thermoelectric efficiencies and they could outperform existing materials in the field of energy conversion. However, their capabilities at the more technologically relevant temper
Externí odkaz:
https://doaj.org/article/6e2857d556bf42f793abd4647c00a67e
Autor:
Pengyan Wen, Preksha Tiwari, Svenja Mauthe, Heinz Schmid, Marilyne Sousa, Markus Scherrer, Michael Baumann, Bertold Ian Bitachon, Juerg Leuthold, Bernd Gotsmann, Kirsten E. Moselund
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-11 (2022)
To realize on-chip optical communication schemes based on silicon, the integration of waveguides onto III-V devices must be achieved. Here, the authors report waveguide-coupled III-V heterostructure photodiodes monolithically integrated on silicon wa
Externí odkaz:
https://doaj.org/article/f45527129cc44c06a14be2f78a4439a3
Autor:
Maarten R. van Delft, Yaxian Wang, Carsten Putzke, Jacopo Oswald, Georgios Varnavides, Christina A. C. Garcia, Chunyu Guo, Heinz Schmid, Vicky Süss, Horst Borrmann, Jonas Diaz, Yan Sun, Claudia Felser, Bernd Gotsmann, Prineha Narang, Philip J. W. Moll
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
A good way to identify microscopic conduction regimes where current flow deviates from Ohm’s law is still lacking. Here, the authors identify Sondheimer oscillations as a quantitative probe of the length scale of relaxing electron scattering in stu
Externí odkaz:
https://doaj.org/article/c102c22335964c7fb04f4065c7726016
Autor:
Alan Molinari, Federico Balduini, Lorenzo Rocchino, Rafał Wawrzyńczak, Marilyne Sousa, Holt Bui, Christian Lavoie, Vesna Stanic, Jean Jordan-Sweet, Marinus Hopstaken, Serguei Tchoumakov, Selma Franca, Johannes Gooth, Simone Fratini, Adolfo G. Grushin, Cezar Zota, Bernd Gotsmann, Heinz Schmid
Publikováno v:
ACS Applied Electronic Materials. 5:2624-2637
Autor:
Elisabetta Corti, Joaquin Antonio Cornejo Jimenez, Kham M. Niang, John Robertson, Kirsten E. Moselund, Bernd Gotsmann, Adrian M. Ionescu, Siegfried Karg
Publikováno v:
Frontiers in Neuroscience, Vol 15 (2021)
In this work we present an in-memory computing platform based on coupled VO2 oscillators fabricated in a crossbar configuration on silicon. Compared to existing platforms, the crossbar configuration promises significant improvements in terms of area
Externí odkaz:
https://doaj.org/article/a06c4f3d0a1b4a269e97432bb1b6d0be
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 9, Iss 1, Pp 129-136 (2018)
As electronic devices are downsized, physical processes at the interface to electrodes may dominate and limit device performance. A crucial step towards device optimization is being able to separate such contact effects from intrinsic device properti
Externí odkaz:
https://doaj.org/article/06cca70b740b46778d29352a4bf725eb