Zobrazeno 1 - 10
of 172
pro vyhledávání: '"Bernardette Kunert"'
Autor:
Yves Mols, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais, Nadine Collaert, Robert Langer, Bernardette Kunert
Publikováno v:
Materials, Vol 14, Iss 19, p 5682 (2021)
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF app
Externí odkaz:
https://doaj.org/article/5168191abba442179b4c35c49a36ad89
Autor:
Marina Baryshnikova, Yves Mols, Yoshiyuki Ishii, Reynald Alcotte, Han Han, Thomas Hantschel, Olivier Richard, Marianna Pantouvaki, Joris Van Campenhout, Dries Van Thourhout, Robert Langer, Bernardette Kunert
Publikováno v:
Crystals, Vol 10, Iss 4, p 330 (2020)
Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and het
Externí odkaz:
https://doaj.org/article/c5bd24532e2f4edf8f579325c1c35413
Autor:
Bernardette Kunert, Yves Mols, Reynald Alcotte, Peter Swekis, Sachin Yadav, Abhitosh Vais, Annie Kumar, Guillaume Boccardi, Robert Langer, Bertrand Parvais, Nadine Collaert
Publikováno v:
ECS Transactions. 111:105-116
The power amplifier (PA) in an RF front-end module operating above 100 GHz required for 6G wireless networks is the most power-hungry device circuit component. In that respect, InP-based heterojunction bipolar transistors (HBT) clearly outperform oth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39d1100d8d34b4a7c372eaa245e4727
https://doi.org/10.1149/11101.0105ecst
https://doi.org/10.1149/11101.0105ecst
Publikováno v:
IEEE Spectrum. 60:32-37
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a42520b60b34cb7bce8276403e258e22
https://doi.org/10.1109/mspec.2023.10120688
https://doi.org/10.1109/mspec.2023.10120688
Autor:
Marianna Pantouvaki, Nadezda Kuznetsova, Yannick De Koninck, Joris Van Campenhout, Didit Yudistira, Marina Baryshnikova, Bernardette Kunert, Dries Van Thourhout, Cenk Ibrahim Ozdemir
Publikováno v:
Journal of Lightwave Technology. 39:5263-5269
We report on high-quality InGaAs/GaAs multi-quantum well waveguide photodetectors, monolithically integrated through metalorganic vapor-phase selective-area epitaxial growth and contact metallization in a 300-mm CMOS pilot line. The photodetectors ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::331fb038c82322b765ea5d0bc0b22aae
https://doi.org/10.1109/jlt.2021.3084324
https://doi.org/10.1109/jlt.2021.3084324
Autor:
Niamh Waldron, Bernardette Kunert, Nadine Collaert, Yves Mols, Robert Langer, Reynald Alcotte, Marina Baryshnikova
Publikováno v:
Crystal Growth & Design. 21:1657-1665
Nano-ridge engineering (NRE) is a novel heteroepitaxial integration approach for III–V devices on Si substrates. It starts with selective area growth in narrow trenches for misfit defect trapping. ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d418fa2d71e73dcff845cba47cbc13
https://doi.org/10.1021/acs.cgd.0c01486
https://doi.org/10.1021/acs.cgd.0c01486
Autor:
Davide Colucci, Marina Baryshnikova, Yuting Shi, Yves Mols, Muhammad Muneeb, Yannick De Koninck, Didit Yudistira, Marianna Pantouvaki, Joris Van Campenhout, Robert Langer, Dries Van Thourhout, Bernardette Kunert
Publikováno v:
OPTICS EXPRESS
We introduce a new design space for optimizing III-V devices monolithically grown on Silicon substrates by extending the concept of nano-ridge engineering from binary semiconductors such as GaAs, InAs and GaSb to the ternary alloy InGaAs. This allows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63039006e622fa7261a2ab977b1991de
https://pubmed.ncbi.nlm.nih.gov/35472961
https://pubmed.ncbi.nlm.nih.gov/35472961
Autor:
Ping-Yi Hsieh, Artemisia Tsiara, Barry O'Sullivan, Didit Yudistira, Marina Baryshnikova, Guido Groeseneken, Bernardette Kunert, Marianna Pantouvaki, Joris Van Campenhout, Ingrid De Wolf
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1197339e394993111092d780a4b5c464
https://doi.org/10.1109/irps48227.2022.9764597
https://doi.org/10.1109/irps48227.2022.9764597
Autor:
P. Lagrain, Thomas Hantschel, Clement Porret, Tomas Vystavel, Roger Loo, Libor Strakos, Han Han, Marina Baryshnikova, Bernardette Kunert
Publikováno v:
International Symposium for Testing and Failure Analysis.
Although the physical limits of CMOS scaling should have been reached years ago, the process is still ongoing due to continuous improvements in material quality and analytical techniques. This paper describes one such technique, electron channeling c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad91065a75252f3a486183c2451f8ef
https://doi.org/10.31399/asm.cp.istfa2021p0211
https://doi.org/10.31399/asm.cp.istfa2021p0211
Autor:
Sachin Yadav, Liesbeth Witters, Yves Mols, Robert Langer, A. Vais, Guillaume Boccardi, Bertrand Parvais, Bernardette Kunert, Nadine Collaert, Reynald Alcotte, Marina Baryshnikova, Komal Vondkar, Niamh Waldron
Publikováno v:
Materials, Vol 14, Iss 5682, p 5682 (2021)
Materials
Volume 14
Issue 19
Materials
Volume 14
Issue 19
Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF app
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2850c5be91ae96093ade31daf89e29c1
https://www.mdpi.com/1996-1944/14/19/5682
https://www.mdpi.com/1996-1944/14/19/5682