Three-phase metal-insulator transition and structural alternative for a VO2 film epitaxially grown on Al2O3(0001)

Autor: Aline Y. Ramos, Ana Lacoste, Alexandre Bes, Christophe Bouchard, Stéphane Grenier, Laurence Magaud, Edith Bellet-Amalric, Bernard Mongellaz, Pierre Bouvier, Laetitia Laversenne, Michelle Marie S. Villamayor, Michael Gaudin, Aude Bailly

Publikováno v: Journal of Applied Physics
Journal of Applied Physics, 2019, 126 (16), pp.165306. ⟨10.1063/1.5113771⟩
Journal of Applied Physics, American Institute of Physics, 2019, 126 (16), pp.165306. ⟨10.1063/1.5113771⟩

International audience; We report on the crystallographic phases and their epitaxial relationships observed during the metal-insulator transition (MIT) of a VO2 film deposited on Al2O3(0001). A key feature of this work is to establish two possible in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d99b681f4762412eb0aaf11e806a104e
https://hal.science/hal-02362928