Zobrazeno 1 - 10
of 113
pro vyhledávání: '"Bernard L. Weiss"'
Publikováno v:
Journal of Physics D: Applied Physics. 39:1805-1814
Three-dimensional full-wave electromagnetic analysis of a travelling-wave heterojunction phototransistor (HPT) is presented. Employing the finite-difference time-domain method and run on a fast, parallel processing machine the simulation herein allow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bc94c1bce726c1725aa8716ee6868b1
https://doi.org/10.1088/0022-3727/39/9/016
https://doi.org/10.1088/0022-3727/39/9/016
Micromachining of three-dimensional GaAs membrane structures using high-energy nitrogen implantation
Publikováno v:
Journal of Micromechanics and Microengineering. 13:35-39
In this paper we present an alternative technology for micromachining gallium arsenide (GaAs) using deep ion implantation. Energetic nitrogen ions at 630 keV and 4 MeV have been used to implant deeply into an n-type GaAs substrate with doses of 2 x 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0be766733c1f421445803fadb5586e4
https://doi.org/10.1088/0960-1317/13/1/305
https://doi.org/10.1088/0960-1317/13/1/305
Publikováno v:
Journal of Applied Physics. 92:2923-2928
We present deep ion implantation technology to fabricate the GaAs microstructures for microelectromechanical systems applications. 630 keV and 4 MeV nitrogen ions were used to implant deeply into an n-type GaAs substrate with doses of 2x10(14) and 1x
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d6f53cf70306f1288e7c89854571fa1
https://doi.org/10.1063/1.1498886
https://doi.org/10.1063/1.1498886
Publikováno v:
Journal of Applied Physics. 90:276-282
Micro-Raman scattering experiments have been carried out to study a SiGe/Si photoelastic optical channel waveguide structure. A Si3N4 stressor stripe was fabricated on a SiGe/Si planar waveguide to create local stress variation beneath the stripe. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::018adf6190c3dc3b0b4e167df2fada24
https://doi.org/10.1063/1.1376420
https://doi.org/10.1063/1.1376420
Publikováno v:
Journal of Applied Physics. 88:3418-3425
We present a model for the optical properties of interdiffused InGaAs/InP quantum well structures. The structure is investigated in a two-phase group V interdiffusion that is characterized by three parameters: the interdiffusion coefficient in the ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ca24b77704e0364f75727438db32c7
https://doi.org/10.1063/1.1285840
https://doi.org/10.1063/1.1285840
Publikováno v:
IEEE Journal of Quantum Electronics. 35:913-921
A theoretical study of the polarization-independent optical gain using group V sublattice interdiffusion in InGaAs-InP quantum wells (QWs) is presented here. The reverse bias and carrier effects on the subband structures, transition energy, and optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d291c3e2f4c18a1b9b9ad43cc8e13fb
https://doi.org/10.1109/3.766834
https://doi.org/10.1109/3.766834
Publikováno v:
Journal of Applied Physics. 83:858-866
The surface acoustic wave produced electron absorptive and electro-optic modulation in AlGaAs/GaAs quantum well structures are theoretically analyzed. The quantum well structures are optimized by maximizing the optical confinement of the modal field
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c7e826873f9206a2e416abece793e4
https://doi.org/10.1063/1.366768
https://doi.org/10.1063/1.366768
Autor:
Bernard L. Weiss, C. Thompson
Publikováno v:
IEEE Journal of Quantum Electronics. 34:300-306
The effects of a propagating surface acoustic wave (SAW) on the transitions in single- and multiple-quantum-well structures and the change in their absorption and refractive index are presented here. The fundamental difference between the effects of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2293245219d933ad523e6315351ca703
https://doi.org/10.1109/3.658719
https://doi.org/10.1109/3.658719
Autor:
Bernard L. Weiss, Wallace C. H. Choy
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 4:758-764
A theoretical study of short period AlGaAs-GaAs diffused quantum-well (QW) absorption modulators operated by using surface acoustic waves (SAWs) is carried out in this paper. The as-grown QW structure is optimized and interdiffusion is used to fine t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fceb33e1f454ccca0c579768d3ef4964
https://doi.org/10.1109/2944.720489
https://doi.org/10.1109/2944.720489
Publikováno v:
IEEE Journal of Quantum Electronics. 34:84-92
Waveguide phase modulators, with 0.5- and 1-/spl mu/m quantum-well (QW) active regions which are defined by impurity induced disordering are investigated theoretically. By controlling the extent of the interdiffusion in the lateral claddings, the ref
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73a0bd502fe3a78ce2be8f4392acc487
https://doi.org/10.1109/3.655011
https://doi.org/10.1109/3.655011